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Researcher profile

Ho-Hyun Nahm

Ho-Hyun Nahm contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nnphysics.chem-phphysics.comp-ph

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2 published item(s)

preprint2012arXiv

Electronic Structures of Oxygen-deficient Ta2O5

We provide a first-principles description of the crystalline and oxygen-deficient Ta2O5 using refined computational methods and models. By performing calculations on a number of candidate structures, we determined the low-temperature phase and several stable oxygen vacancy configurations, which are notably different from the previous results. The most stable charge-neutral vacancy site induces a shallow level near the bottom of conduction band. Stability of different charge states is studied. Based on the results, we discuss the implications of the level structures on experiments, including the leakage current in Ta2O5-based electronic devices and catalysts.

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preprint2011arXiv

Instability of Amorphous Oxide Semiconductors via Carrier-Mediated Structural Transition between Disorder and Peroxide State

The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O$_2^{2-}$ peroxide defects. The valence band tail states are at least partly characterized by the O-O ppσ* molecular orbital, and the localized-hole-mediated lattice instability results in the formation of the peroxide defects. Along with the O-O bond formation, the ppσ* state is heightened up into the conduction bands, and two electrons are accordingly doped in the electronic ground state. The energy barrier from the O$_2^{2-}$ peroxide state to the normal disorder state is found to be 0.97 eV in hybrid density functional theory. The hole-mediated formation of the meta-stable peroxide defects and their meta-stability is suggested as an origin of the negative bias and/or illumination stress instability in amorphous oxide semiconductors.

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