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Hiroshi Kambara

Hiroshi Kambara appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2011arXiv

Edge states of Sr$_2$RuO$_4$ detected by in-plane tunneling spectroscopy

We perform tunneling spectroscopy of Sr$_2$RuO$_4$ searching for the edge states peculiar to topological superconductivity. Conductance spectra obtained on Sr$_2$RuO$_4$/Au junctions fabricated using $in$ $situ$ process show broad humps indicating the successful detection of a-axis edge of 1.5K phase. Three types of peak shape are detected: domelike peak, split peak and two-step peak. By comparing the experiments with predictions for unconventional superconductivity, these varieties are shown to originate from multiband chiral p-wave symmetry with weak anisotropy of pair amplitude. The broad hump in conductance spectrum is a direct manifestation of the edge state peculiar to the chiral p-wave superconductivity.

preprint2010arXiv

DC Current Driven Critical Current Variation in Sr2RuO4-Ru Junction Proved by Local Transport Measurements

To search for new evidence of the chiral p-wave superconducting domain in Sr2RuO4, we investigated the unconventional local transport characteristics of a microfabricated Sr2RuO4-Ru eutectic junction. We found that the anomalous hysteresis in voltage-current characteristics [as reported in H. Kambara et al.: Phys. Rev. Lett. 101 (2008) 267003.] is strongly affected by dc currents, but not by magnetic fields. This suggests that dc current acts as a driving force to move chiral p-wave domain walls; a domain wall trapped at a pinning potential is forced to shift to the next stable position, thereby forming a larger critical current path and resulting in the anomalous hysteresis.

preprint2010arXiv

Multi-Junction Switching in Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ Intrinsic Josephson Junctions

We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions ($N$) was successfully tuned by changing the load resistance serially connected to an Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ IJJ array. The independence of the escape rates of $N$ in the macroscopic quantum tunneling regime indicates that MJS is a $successive$ switching process rather than a $collective$ process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current-voltage plane.