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Hideto Yanagihara

Hideto Yanagihara appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2022arXiv

Origin of Perpendicular Magnetic Anisotropy in Co$_x$Fe$_{3-x}$O$_{4+δ}$ Thin Films Studied by X-ray Magnetic Circular and Linear Dichroisms

We investigate the element-specific spin and orbital states and their roles on magnetic anisotropy in the Co-ferrite (Co$_x$Fe$_{3-x}$O$_{4+δ}$ (001)) thin films which exhibit perpendicular magnetic anisotropy (PMA). The origin of PMA in the low $x$ region ($x$ $<$ 1) can be mainly explained by the large perpendicular orbital magnetic moments in the Co$^{2+}$ (3$d^7$) states detected by X-ray magnetic circular and linear dichroisms (XMCD/XMLD). The XMLD for a PMA film ($x=0.2$) with square hysteresis curve shows the oblate charge distribution in the Co$^{2+}$ site, which is consistent with the change in local nearest neighbor distance in Co detected by extended X-ray absorption fine structure analysis. Our finding reveals that the microscopic origin of PMA in Co-ferrite comes from the enhanced orbital magnetic moments along out-of-plane [001] direction through in-plane charge distribution by tensile strain, which adds the material functionalities in spinel ferrite thin films from the viewpoint of strain and orbital magnetic moments.

preprint2015arXiv

Roadmap for Emerging Materials for Spintronic Device Applications

The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet. We have accordingly identified 2 key properties to be achieved by developing new magnetic materials for future spintronic devices: (1) Half-metallicity at room temperature (RT); (2) Perpendicular anisotropy in nano-scale devices at RT. For the first property, 5 major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: Heusler alloys, ferrites, rutiles, perovskites and dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarisation at EF. We have also evaluated L10-alloys and D022-Mn-alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarisation. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations and interdisciplinary applications within 35 years time scale.