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Hidefumi Hiura

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Published work

4 published item(s)

preprint2016arXiv

Multiple Rabi Splittings under Ultra-Strong Vibrational Coupling

From the high vibrational dipolar strength offered by molecular liquids, we demonstrate that a molecular vibration can be ultra-strongly coupled to multiple IR cavity modes, with Rabi splittings reaching $24\%$ of the vibration frequencies. As a proof of the ultra-strong coupling regime, our experimental data unambiguously reveal the contributions to the polaritonic dynamics coming from the anti-resonant terms in the interaction energy and from the dipolar self-energy of the molecular vibrations themselves. In particular, we measure the opening of a genuine vibrational polaritonic bandgap of ca. $60$ meV. We also demonstrate that the multimode splitting effect defines a whole vibrational ladder of heavy polaritonic states perfectly resolved. These findings reveal the broad possibilities in the vibrational ultra-strong coupling regime which impact both the optical and the molecular properties of such coupled systems, in particular in the context of mode-selective chemistry.

preprint2011arXiv

Observation of Tunneling Current in Semiconducting Graphene p-n Junctions

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n interface. A current-voltage relationship exhibiting differential resistance peak at forward bias stems from the tunneling current through the insulating region at the p-n interface. The tunneling current reflects singularities in the density of states modified by the electric field. This work suggests that the effect of carrier charge tuning by external electric field in 2D semiconductors is analogously to that by impurity doping in 3D semiconductors.

preprint2010arXiv

Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Derived from Individual Graphene Layers

Using a scanning electron microscope, we observed a reproducible, discrete distribution of secondary electron intensity stemming from an atomically thick graphene film on a thick insulating substrate. The discrete distribution made it possible to uniquely relate the secondary electron intensity to the number of graphene layers. Furthermore, we found a distinct linear relationship between the relative secondary electron intensity from graphene and the number of layers, provided a low primary electron acceleration voltage was used. Based on these observations, we propose a practical method to determine the number of graphene layers in a sample. This method is superior to the conventional optical method in its capability to characterize graphene samples with sub-micrometer squares in area on various insulating substrates.

preprint2010arXiv

Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels

Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene.