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Harold G. Craighead

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3 publications

preprint2014arXiv

Evanescent field optical readout of graphene mechanical motion at room temperature

Graphene mechanical resonators have recently attracted considerable attention for use in precision force and mass sensing applications. To date, readout of their oscillatory motion has typically required cryogenic conditions to achieve high sensitivity, restricting their range of applications. Here we report the first demonstration of evanescent optical readout of graphene motion, using a scheme which does not require cryogenic conditions and exhibits enhanced sensitivity and bandwidth at room temperature. We utilise a high QQ microsphere to enable evanescent readout of a 70 μμm diameter graphene drum resonator with a signal-to-noise ratio of greater than 25 dB, corresponding to a transduction sensitivity of SN1/2=S_{N}^{1/2} = 2.6 ×10−13\times 10^{-13} m Hz−1/2\mathrm{Hz}^{-1/2}. The sensitivity of force measurements using this resonator is limited by the thermal noise driving the resonator, corresponding to a force sensitivity of Fmin=1.5×10−16F_{min} = 1.5 \times 10^{-16} N Hz−1/2{\mathrm{Hz}}^{-1/2} with a bandwidth of 35 kHz at room temperature (T = 300 K). Measurements on a 30 μμm graphene drum had sufficient sensitivity to resolve the lowest three thermally driven mechanical resonances.

preprint2013arXiv

Graphene Metallization of High-Stress Silicon Nitride Resonators for Electrical Integration

High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30 % on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electro-static tuning of the frequency by up to 1 % per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

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