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Harneet Kaur

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Published work

3 published item(s)

preprint2021arXiv

Phase modulated domain walls and dark solitons for surface gravity waves

We report theoretical prediction of exact localized solutions for dynamics of surface gravity waves, at the critical point kh=1.363, modelled by higher-order nonlinear Schrodinger equation. The model possess domain walls (kink solitons) and dark solitons modulated through different phase profiles. The parametric domains are delineated for the existence of soliton solutions. The effect of wave parameters have been discussed on the amplitude of surface gravity waves. Our work is motivated by Tsitoura et al. [1], on experimental and analytical observation of phase domain walls for deep water surface gravity waves modelled by nonlinear Schrodinger equation.

preprint2020arXiv

Controlled self-similar matter waves in PT-symmetric waveguide

We study the dynamics of Bose-Einstein condensate coupled to a waveguide with parity-time symmetric potential in the presence of quadratic-cubic nonlinearity modelled by Gross-Pitaevskii equation with external source. We employ the self-similar technique to obtain matter wave solutions, such as bright, kinktype, rational dark and Lorentzian-type self-similar waves for this model. The dynamical behavior of self-similar matter waves can be controlled through variation of trapping potential, external source and nature of nonlinearities present in the system.

preprint2016arXiv

Large Area Fabrication of Semiconducting Phosphorene by Langmuir Blodgett Assembly

Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-Methyl-2-pyrrolidone (NMP) and deoxygenated water is employed as a subphase in Langmuir Blodgett (LB) trough for assembling the nanosheets followed by their deposition on substrates and studied its field effect transistor (FET) characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 10^4 at room temperature in FET devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications.