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Haosu Luo

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Published work

4 published item(s)

preprint2015arXiv

Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here we investigate resonant magnetization dynamics in ferromagnet/ferrolectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

preprint2014arXiv

Crafting the strain state in epitaxial thin films: A case study of CoFe2O4 films on Pb(Mg,Nb)O3-PbTiO3

The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation (PRO) and polarization reorientation (PRE) in piezoelectric single crystals can provide an effective strain in film/substrate epitaxial heterostructures. However, the specific pathway of PRO and PRE is a complex thermodynamic process, depending on chemical composition, temperature, electric field and mechanical load. Here, systematic studies of the temperature-dependent field-induced phase transitions in Pb(Mg,Nb)O3-PbTiO3 single crystals with different initial phase and orientation configurations have been performed. Different types of strains, volatile/nonvolatile and biaxial/uniaxial, have been measured by both macroscopic and in-situ X-ray diffraction techniques. In addition, the strain state of epitaxial Mn-doped CoFe2O4 thin films was examined by magnetic anisotropy measurements, where a giant magnetoelectric coupling has been demonstrated.

preprint2014arXiv

Electric-field-tunable mechanical properties of relaxor ferroelectric single crystal measured by nanoindentation

Electric field dependent mechanical properties of relaxor ferroelectric material Pb(Mn1/3Nb2/3)O3-PbTiO3 are investigated with the nanoindentation technique. Giant electric-field-tunable apparent elastic modulus (up to -39%), hardness (-9% to 20%) and energy dissipation (up to -13%) are reported. Based on experimental data, a characterization method of electromechanical coupled nanoindentation is proposed. In this method, an electric field tunable scaling relationship among elastic modulus, hardness and indentation work for ferroelectric materials can be determined. In addition, this method can be used to obtain the electric-field-dependent elastic modulus and hardness, and avoid the estimate of contact area in the Oliver-Pharr method. Finally, the different effects on elastic modulus between positive and negative electric fields can be explained by the flexoelectric effect.

preprint2014arXiv

High piezoelectric coefficient of single domain Mn-doped NBT-6%BT single crystals

We report a study of properties of Mn-doped NBT-6%BT single crystals. We show that tetragonal single domain states can be stabilized by poling along a [001] direction. For carefully prepared crystals, the piezoelectric coefficient d33 can reach 570 pC/N. When poled along non-polar directions, the crystals exhibit ferroelectric domain structures consistent with tetragonal micron-sized domains, as revealed by optical observation and Raman spectroscopy. The multidomain crystals have lower d33 values, 225 and 130 pC/N for [011] and [111]-oriented crystals respectively. This trend is commented on from a domain-engineering perspective.