Source author record

Hanno H. Weitering

Hanno H. Weitering appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.supr-con cond-mat.mes-hall

Catalog footprint

What is connected

6works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface

Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; however, the system can be modulation-doped and metallized using heavily-doped p-type Si(111) substrates. Here, we show that the hole-doped dilute adatom layer on a degenerately doped p-type Si(111) wafer is superconducting with a critical temperature of 4.7 +- 0.3 K. While a phonon-mediated coupling scenario would be consistent with the observed TC, Mott correlations in the Sn-derived dangling-bond surface state could suppress the s-wave pairing channel. The latter suggests that the superconductivity in this triangular adatom lattice may be unconventional.

preprint2019arXiv

Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions

Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario involving unbinding of topological defects at two distinct temperatures. Here we report on a novel melting transition of a charge-ordered K-Sn alloy monolayer on a silicon substrate. Melting starts with short-range positional fluctuations in the K sublattice while maintaining long-range order, followed by longer-range K diffusion over small domains, and ultimately resulting in a molten sublattice. Concomitantly, the charge-order of the Sn host lattice collapses in a multi-step process with both displacive and order-disorder transition characteristics. Our combined experimental and theoretical analysis provides a rare insight into the atomistic processes of a multi-step melting transition of a two-dimensional materials system.

preprint2016arXiv

Atomically flat reconstructed rutile TiO2(001) surfaces for oxide film growth

The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructed surface already during a furnace annealing treatment in air. We tentatively ascribe this result to the decrease in surface energy associated with the surface reconstruction, which removes the driving force for faceting. Despite the narrow temperature window where this morphology can initially be formed, we demonstrate that it persists in homoepitaxial growth of TiO2(001) thin films. The stabilization of surface reconstructions that prevent faceting of high-surface-energy crystal faces may offer a promising avenue towards the realization of a wider range of high quality epitaxial transition metal oxide heterostructures.

preprint2015arXiv

Surface Chemical Reactivity of Ultrathin Pd(111) Films on Ru(0001): Importance of Orbital Symmetry in the Application of the d-Band Model

The chemical bonding of adsorbate molecules on transition-metal surfaces is strongly influenced by the hybridization between the molecular orbitals and the metal d-band. The strength of this interaction is often correlated with the location of the metal d-band center relative to the Fermi level. Here, we exploit finite size effects in the electronic structure of ultrathin Pd(111) films grown on Ru(0001) to tune their reactivity by changing the film thickness one atom layer at a time, while keeping all other variables unchanged. Interestingly, while bulk Pd(111) is reactive towards oxygen, Pd(111) films below five monolayers are surprisingly inert. This observation is fully in line with the d-band model prediction when applied to the orbitals involved in the bonding. The shift of the d-band center with film thickness is primarily attributed to shifts in the partial density of states associated with the 4dxz and 4dyz orbitals. This study gives an in-depth look into the orbital specific contributions to the surface chemical reactivity, providing new insights that could be useful in surface catalysis.

preprint2012arXiv

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

preprint2006arXiv

Hard Superconductivity of a Soft Metal in the Quantum Regime

Superconductivity is inevitably suppressed in reduced dimensionality. Questions of how thin superconducting wires or films can be before they lose their superconducting properties have important technological ramifications and go to the heart of understanding coherence and robustness of the superconducting state in quantum-confined geometries. Here, we exploit quantum confinement of itinerant electrons in a soft metal to stabilize superconductors with lateral dimensions of the order of a few millimeters and vertical dimensions of only a few atomic layers. These extremely thin superconductors show no indication of defect- or fluctuation-driven suppression of superconductivity and sustain supercurrents of up to 10% of the depairing current density. The extreme hardness of the critical state is attributed to quantum trapping of vortices. This study paints a conceptually appealing, elegant picture of a model nanoscale superconductor with calculable critical state properties. It indicates the intriguing possibility of exploiting robust superconductivity at the nanoscale.