Source author record

Hani E. Elsayed-Ali

Hani E. Elsayed-Ali appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2022arXiv

Effect of substrate temperature on the growth of Nb3Sn film on Nb by multilayer sputtering

Nb3Sn films were fabricated by multilayer sequential sputtering on Nb at substrate temperatures ranging from room temperature to 250 °C. The multilayers were then annealed inside a separate vacuum furnace at 950 °C for 3h. The films material properties were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and transmission electron microscopy. The films superconducting properties were studied by four-point probe resistivity measurements from room temperature to below the superconducting critical temperature Tc. The highest film Tc was 17.76 K, obtained when the multilayers were deposited at room temperature. A superconducting Nb3Sn thin film with a smoother surface morphology but a lower Tc of 17.58 K was obtained on the film deposited at a substrate temperature of 250 °C.

preprint2021arXiv

Boron and Barium Incorporation at the 4H-SiC/SiO2 Interface using a Laser Multi-Charged Ion Source

A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ = 7 ns, and fluence F = 135 J/cm2) was used to ablate B and Ba targets to generate multicharged ions. The ions were deflected by an electrostatic field to separate them from the neutrals. The multicharged ions were used for nanometer layer growth and shallow ion implantation in 4H-SiC. Several metal-oxide-semiconductor capacitors (MOSCAP) were fabricated with a combination of B and Ba at the SiC/SiO2 interface. High-low C-V measurements were used to characterize the MOSCAPs. The B interfacial layer reduced the MOSCAP flatband voltage from 4.5 to 0.04 V, while the Ba layer had a negligible effect.