Researcher profile

Hanhee Paik

Hanhee Paik contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Optimization of the resonator-induced phase gate for superconducting qubits

The resonator-induced phase gate is a two-qubit operation in which driving a bus resonator induces a state-dependent phase shift on the qubits equivalent to an effective $ZZ$ interaction. In principle, the dispersive nature of the gate offers flexibility for qubit parameters. However, the drive can cause resonator and qubit leakage, the physics of which cannot be fully captured using either the existing Jaynes-Cummings or Kerr models. In this paper, we adopt an ab-initio model based on Josephson nonlinearity for transmon qubits. The ab-initio analysis agrees well with the Kerr model in terms of capturing the effective $ZZ$ interaction in the weak-drive dispersive regime. In addition, however, it reveals numerous leakage transitions involving high-excitation qubit states. We analyze the physics behind such novel leakage channels, demonstrate the connection with specific qubits-resonator frequency collisions, and lay out a plan towards device parameter optimization. We show this type of leakage can be substantially suppressed using very weakly anharmonic transmons. In particular, weaker qubit anharmonicity mitigates both collision density and leakage amplitude, while larger qubit frequency moves the collisions to occur only at large anharmonicity not relevant to experiment. Our work is broadly applicable to the physics of weakly anharmonic transmon qubits coupled to linear resonators. In particular, our analysis confirms and generalizes the measurement-induced state transitions noted in Sank et al. (Phys. Rev. Lett. 117, 190503) and lays the groundwork for both strong-drive resonator-induced phase gate implementation and strong-drive dispersive qubit measurement.

preprint2010arXiv

Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS) defect model. Each a-SiN$_{x}$:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent $\tanδ_{0}$ in a-SiN$_{x}$:H is strongly correlated with N-H impurities, including NH$_{2}$. By slightly reducing $x$ we are able to reduce $\tanδ_0$ by approximately a factor of 50, where the best films show $\tanδ_0$ $\simeq$ 3 $\times$ 10$^{-5}$.