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Hang Zang

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Published work

2 published item(s)

preprint2020arXiv

Enhancement of hydroxyapatite dissolution through structure modification by Krypton ion irradiation

Hydroxyapatite synthesized by a wet chemical route was subjected to heavy Krypton ion irradiation of 4MeV at various fluences. Glancing incidence Xray diffraction results confirmed the phase purity of irradiated HA with a moderate contraction in lattice parameters, and further indicated the irradiation induced structural disorder, evidenced by broadening of the diffraction peaks. High resolution transmission electron microscopy observations indicated that the applied Kr irradiation induced significant damage in the hydroxyapatite lattice. Specifically, cavities were observed with their diameter and density varying with the irradiation fluences, while a radiation induced crystalline to amorphous transition with increasing ion dose was identified. Raman and Xray photoelectron spectroscopy analysis further indicated the presence of irradiation induced defects. Ion release from pristine and irradiated materials following immersion in Trisbuffer showed that dissolution in vitro was enhanced by irradiation. We examined the effects of irradiation on the early stages of the mouse osteoblast like cells response. A cell counting kit 8 assay was carried out to investigate the cytotoxicity of samples, and viable cells can be observed on the irradiated materials.

preprint2015arXiv

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the long-term evolution of displacement damage induced by heavy-ion irradiation in cubic silicon carbide. The isochronal annealing after heavy ion irradiation is simulated, and the annealing behaviors of total interstitials are found consistent with previous experiments. Two annealing stages below 600K and one stage above 900K are identified. The mechanisms for those recovery stages are interpreted by the evolution of defects. The influence of the spatial correlation in primary damage on defect recovery has been studied and found insignificant when the damage dose is high enough, which sheds light on the applicability of approaches with mean-field approximation to the long-term evolution of damage by heavy ions in SiC.