BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Han Seul Kim

Han Seul Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sci

Catalog footprint

What is connected

7works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2015arXiv

Carbon nanobuds based on carbon nanotube caps: A first-principles study

Based on density functional theory calculations, we here show that the formation of a fullerene C$_{60}$ carbon "nanobud" (CNB) on carbon nanotube (CNT) caps is energetically more favorable than that on CNT sidewalls. The dominant CNB formation mode for CNT caps is found to be the [2+2] cycloaddition reaction as in the conventional CNT sidewall case. However, it is identified to be exothermic in contrast to the endothermic reaction on CNT sidewalls. Computed reaction pathways further demonstrate that the formation (dissociation) barrier for the CNT cap-based CNB is slightly lower (significantly higher) than that of the CNT sidewall-based CNB, indicating an easier CNB formation as well as a higher structural stability. Additionally, performing matrix Green's function calculations, we study the charge transport properties of the CNB/metal electrode interfaces, and show that the C$_{60}$ bonding to the CNT cap or open end induces resonant transmissions near the Fermi level. It is also found that the good electronic linkage in the CNT cap-C$_{60}$ cycloaddition bonds results in the absence of quantum interference patterns, which contrasts the case of the CNB formed on an open-ended CNT that shows a Fano resonance profile.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Controlling transport properties of graphene nanoribbons by codoping-induced edge distortions

One notable manifestation of the peculiar edge-localized states in zigzag graphene nanoribbons (zGNRs) is the p-type (n-type) characteristics of nitrogen (boron) edge-doped GNRs, and such behavior was so far considered to be exclusive for zGNRs. Carrying out first-principles electronic structure and quantum transport calculations, we herein show that the donor-acceptor transition behavior can also arise in the B/N edge-doped armchair GNRs (aGNRs) by introducing a bipolar P codopant atom into the energetically most favorable nearest neighbor edge sites. The n-type (p-type) transport properties of B,P (N,P) co-doped aGNRs are also shown to be superior to those of reference single N (B) doped aGNRs in that the valence (conduction) band edge conductance spectra are better preserved. Disentangling the chemical doping and structural distortion effects, we will demonstrate that the latter plays an important role in determining the transport type and explains the donor-acceptor transition feature as well as the bipolar character of P-doped aGNRs. We thus propose the systematic modification of GNR edge atomic structures via co-doping as a novel approach to control charge transport characteristics of aGNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomistic Mechanisms of Codoping-Induced p- to n-Type Conversion in Nitrogen-Doped Graphene

It was recently shown that nitrogen-doped graphene (NG) can exhibit both p- and n-type characters depending on the C-N bonding nature, which represents a significant bottleneck for the development of graphene-based electronics. Based on first-principles calculations, we herein scrutinise the correlations between atomic and electronic structures of NG, and particularly explore the feasibility of converting p-type NG with pyridinic, pyrrolic, and nitrilic N into n- or bipolar type by introducing an additional dopant atom. Out of the nine candidates, B, C, O, F, Al, Si, P, S, and Cl, we find that the B-, Al-, and P-codoping can anneal even relatively large vacancy defects in p-type NG. It will be also shown that, while the NG with pyridinic N can be converted into n-type via codoping, only the bipolar type conversion can be achieved for the NG with nitrilic or pyrrolic N. The amount of work function reduction was up to 0.64 eV for the pyridinic N next to a monovacancy. The atomistic origin of such diverse type changes is analysed based on Mulliken and crystal orbital Hamiltonian populations, which provide us with a framework to connect the local bonding chemistry with macroscopic electronic structure in doped and/or defective graphene. Moreover, we demonstrate that the proposed codoping scheme can recover the excellent charge transport properties of pristine graphene. Both the type conversion and conductance recovery in codoped NG should have significant implications for the electronic and energy device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons

We present an ab initio study of the structural, electronic, and quantum transport properties of B-N-complex edge-doped graphene nanoribbons (GNRs). We find that the B-N edge codop-ing is energetically a very favorable process and furthermore can achieve novel doping effects that are absent for the single B or N doping. The compensation effect between B and N is predicted to generally recover the excellent electronic transport properties of pristine GNRs. For the zigzag GNRs, however, the spatially localized B-N defect states selectively destroy the doped-side spin-polarized GNR edge currents at the valence and conduction band edges. We show that the energetically and spatially spin-polarized currents survive even in the fully ferromagnetic metallic state and heterojunction configurations. This suggests a simple yet ef-ficient scheme to achieve effectively smooth GNR edges and graphene-based spintronic de-vices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Distinct mechanisms of DNA sensing based on N-doped carbon nanotubes with enhanced conductance and chemical selectivity

Carrying out first-principles calculations, we study N-doped capped carbon nanotube (CNT) electrodes applied to DNA sequencing. While we obtain for the face-on nucleobase junction configurations a conventional conductance ordering where the largest signal results from guanine according to its high highest occupied molecular orbital (HOMO) level, we extract for the edge-on counterparts a distinct conductance ordering where the low-HOMO thymine provides the largest signal. The edge-on mode is shown to operate based on a novel molecular sensing mechanism that reflects the chemical connectivity between N-doped CNT caps that can act both as electron donors and electron acceptors and DNA functional groups that include the hyperconjugated thymine methyl group.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Recent progress in atomistic simulation of electrical current DNA sequencing

We review recent advances in the DNA sequencing based on the measurement of transverse electrical currents. Device configurations proposed in the literature are classified according to whether the molecular fingerprints appear as the major (Mode I) or perturbing (Mode II) current signals. Scanning tunneling microscope and tunneling electrode gap configurations belong to the former category, while the nanochannels with or without an embedded nanopore belong to the latter. The molecular sensing mechanisms of Modes I and II roughly correspond to the electron tunneling and electrochemical gating, respectively. Special emphasis will be given on the computer simulation studies, which have been playing a critical role in the initiation and development of the field. We also highlight low-dimensional nanomaterials such as carbon nanotubes, graphene, and graphene nanoribbons that allow the novel Mode II approach. Finally, several issues in previous computational studies are discussed, which points to future research directions toward more reliable simulation of electrical current DNA sequencing devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Prediction of ultra-high ON/OFF ratio nanoelectromechanical switching from covalently-bound C60 chains

Applying a first-principles computational approach, we have systematically analyzed the effects of [2+2] cycloaddition oligomerization of fullerene C60 chains on their junction electronic and charge transport properties. For hypothetical infinite C60 chains, we first establish that the polymerization can in principle increase conductance by several orders of magnitude due to the strong orbital hybridizations and band formation. On the other hand, our simulations of the constant-height scanning tunneling microscope (STM) configuration shows that, in agreement with the recent experimental conclusion, the junction electronic structure and device characteristics are virtually unaffected by the C60 chain oligomerization. We further predict that the switching characteristics including even the ON/OFF-state assignment will sensitively depend on the substrate metal species due to the Fermi-level pinning at the substrate-side contact and the subsequent energy level bending toward the STM tip-side contact. We finally demonstrate that a force-feedbacked nanoelectromechanical approach in which both of the C60-electrode distances are kept at short distances before and after switching operations can achieve a metal-independent and significantly improved switching performance due to the Fermi-level pinning in both contacts and the large intrinsic conductance switching capacity of the C60 chain oligomerization.

0 citations0 reviewsNo code linkedOpen access