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Haisheng Fang

Haisheng Fang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2016arXiv

Thermal conductivity reduction by 60° shuffle-set dislocation arrays embedded in silicon nano-films

Based on the Debye-Callaway and the Klemens model, as well as molecular dynamics, the paper proposes mechanism of thermal conductivity reduction by embedding dense 60° shuffle-set dislocation arrays into silicon nano-films. Thermal conductivity reduction to 2% of that of bulk silicon has been obtained. The reduction is found mainly due to longitudinal phonon scattering at the dislocation cores, where the scattering rate is stronger than that presented by Klemens. Within an effective diameter of about 9 nm around their cores, the dislocations locally scatter phonons, resulting in a dramatical density-dependent reduction of thermal conductivity for a dislocation density larger than 10^14 m^-2.

preprint2015arXiv

A Revisit to High Thermoelectric Performance of Single-layer MoS2

Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dynamics (MD) simulations. The predicted value of ZT is as high as 0.26 at 500K. As the thermal conductivity could be reduced largely by phonon engineering, there should be a high possibility to enhance ZT in the SLMoS2-based materials.