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Haifan Li

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cond-mat.mtrl-sci physics.app-ph

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preprint2023arXiv

Non-Equilibrium Spark Plasma Reactive Doping Enables Highly Adjustable Metal to Insulator Transitions and Improved Mechanical Stability for VO2

Although vanadium dioxide (VO2) exhibits the most abrupt metal to insulator transition (MIT) properties near room-temperature, the present regulation of their MIT functionalities is insufficient owing to the high complexity and susception associated with V4+. Herein, we demonstrate a spark plasma assisted reactive sintering (SPARS) approach to simultaneously achieve in situ doping and sintering of VO2 within largely short period (~10 minutes). This enables high convenience and flexibility in regulating the electronic structure of VO2 via dopant elements covering Ti, W, Nb, Mo, Cr and Fe, leading to a wide adjustment in their metal to insulator transition temperature (TMIT) and basic resistivity. Furthermore, the mechanical strengths of the doped-VO2 were meanwhile largely improved via the compositing effect of high melting-point dopant oxide. The high adjustability in MIT properties and improved mechanical properties further paves the way towards practical applications of VO2 in power electronics, thermochromism and infrared camouflage.

preprint2021arXiv

Hydrogen induced electronic transition within correlated perovskite nickelates with heavy rare-earth composition

Although discovery in hydrogen induced electronic transition within perovskite family of rare-earth nickelate (ReNiO3) opens up a new paradigm in exploring both the new materials functionality and device applications, the existing research stays at ReNiO3 with light rare-earth compositions. To further extend the cognition towards heavier rare-earth, herein we demonstrate the hydrogen induced electronic transitions for quasi-single crystalline ReNiO3/LaAlO3 (001) heterostructures, covering a large variety of the rare-earth composition from Nd to Er. The hydrogen induced elevations in the resistivity of ReNiO3 (RH/R0) show an unexpected non-monotonic tendency with the atomic number of the rare-earth composition, e.g., firstly increase from Nd to Dy and afterwards decreases from Dy to Er. Although ReNiO3 with heavy rare-earth composition (e.g. DyNiO3) exhibits large RH/R0 up to 107, their hydrogen induced electronic transition is not reversible. Further probing the electronic structures via near edge X-ray absorption fine structure analysis clearly demonstrates the respective transition in electronic structures of ReNiO3 from Ni3+ based electron itinerant orbital configurations towards the Ni2+ based electron localized state. Balancing the hydrogen induced transition reversibility with the abruption in the variations of material resistivity, we emphasize that the ReNiO3 with middle rare-earth compositions (e.g. Sm) to be most suitable that caters for the potential applications in correlated electronic devices.

preprint2020arXiv

AC-frequency switchable correlated transports in rare-earth perovskite nickelates

Whilst electron correlations were previously recognized to trigger beyond conventional direct current (DC) electronic transportations (e.g. metal-to-insulator transitions, bad metal, thermistors), their respective influences to the alternation current (AC) transport are largely overlooked. Herein, we demonstrate active regulations in the electronic functionalities of d-band correlated rare-earth nickelate (ReNiO3) thin films, by simply utilizing their electronic responses to AC-frequencies (fAC). Assisted by temperature dependent near edge X-ray absorption fine structure analysis, we discovered positive temperature dependences in Coulomb viscosity of ReNiO3 that moderates their AC impedance. Distinguished crosslinking among R(Real)-fAC measured in nearby temperatures is observed that differs to conventional oxides. It enables active adjustability in correlated transports of ReNiO3, among NTCR-, TDelta- and PTCR- thermistors, via fAC from the electronic perspective without varying materials or device structures. The TDelta-fAC relationship can be further widely adjusted via Re composition and interfacial strains. The AC-frequency sensitivity discovered in ReNiO3 brings in a new freedom to regulating and switching the device working states beyond the present semiconductor technologies. It opens a new paradigm for enriching novel electronic applications catering automatic transmission or artificial intelligence in sensing temperatures and frequencies.