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Researcher profile

Haicheng Wang

Haicheng Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Computer Visioncond-mat.mtrl-scieess.IV

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Published work

2 published item(s)

preprint2020arXiv

AIM 2020 Challenge on Efficient Super-Resolution: Methods and Results

This paper reviews the AIM 2020 challenge on efficient single image super-resolution with focus on the proposed solutions and results. The challenge task was to super-resolve an input image with a magnification factor x4 based on a set of prior examples of low and corresponding high resolution images. The goal is to devise a network that reduces one or several aspects such as runtime, parameter count, FLOPs, activations, and memory consumption while at least maintaining PSNR of MSRResNet. The track had 150 registered participants, and 25 teams submitted the final results. They gauge the state-of-the-art in efficient single image super-resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures

Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties and atomic structure. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit cells. The plasmonic oscillations exhibit strong angle dependence, i.e., a red-shift (approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials.

0 citations0 reviewsNo code linkedOpen access