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Researcher profile

H. Pinto

H. Pinto contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

3 published item(s)

preprint2012arXiv

Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond

In this paper, we study the photoinduced switching of the nitrogen-vacancy (NV) center between two different charge states - negative (NV-) and neutral (NV0) at liquid helium temperature. The conversion of NV- to NV0 on a single defect is experimentally proven and its rate scales quadratically with power under resonant excitation. In addition, we found that resonant excitation of the neutral NV changes the charge state, recovering its negative configuration. This type of conversion significantly improves spectral stability of NV- defect and allows high fidelity initialization of the spin qubit. A possible mechanism for ionization and recovery of the NV- defect is discussed. This study provides better understanding of the charge dynamics of the NV center, which is relevant for quantum information processing based on NV defect in diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nanosized precipitates in H13 tool steel low temperature plasma nitriding

A comprehensive study of pulsed nitriding in AISI H13 tool steel at low temperature (400°C) is reported for several durations. X-ray diffraction results reveal that a nitrogen enriched compound (Epsilon-Fe2-3N, iron nitride) builds up on the surface within the first process hour despite the low process temperature. Beneath the surface, X-ray Wavelength Dispersive Spectroscopy (WDS) in a Scanning Electron Microscope (SEM) indicates relatively higher nitrogen concentrations (up to 12 at.%) within the diffusion layer while microscopic nitrides are not formed and existing carbides are not dissolved. Moreover, in the diffusion layer, nitrogen is found to be dispersed in the matrix and forming nanosized precipitates. The small coherent precipitates are observed by High-Resolution Transmission Electron Microscopy (HR-TEM) while the presence of nitrogen is confirmed by electron energy loss spectroscopy (EELS). Hardness tests show that the material hardness increases linearly with the nitrogen concentration, reaching up to 14.5 GPa in the surface while the Young Modulus remains essentially unaffected. Indeed, the original steel microstructure is well preserved even in the nitrogen diffusion layer. Nitrogen profiles show a case depth of about ~43 microns after nine hours of nitriding process. These results indicate that pulsed plasma nitriding is highly efficient even at such low temperatures and that at this process temperature it is possible to form thick and hard nitrided layers with satisfactory mechanical properties. This process can be particularly interesting to enhance the surface hardness of tool steels without exposing the workpiece to high temperatures and altering its bulk microstructure.

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preprint2010arXiv

Mechanisms of doping graphene

We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecule like F4-TCNQ and electropositive metals like K dope graphene p- and n-type respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel doping mechanism is exhibited by Au which dopes bilayer graphene but not single layer. Thirdly, electrochemical doping is effected by redox reactions and can result in p-doping by humid atmospheres and n-doping by NH3 and toluene.

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