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H. O. Everitt

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cond-mat.mtrl-sci

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preprint2010arXiv

Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified.

preprint2009arXiv

Effects of reabsorption and spatial trap distributions on the radiative quantum efficiencies of ZnO

Ultrafast time-resolved photoluminescence spectroscopy following one- and two-photon excitation of ZnO powder is used to gain unprecedented insight into the surprisingly high external quantum efficiency of its "green" defect emission band. The role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and nonradiative traps are comparatively elucidated for the ultraviolet excitonic and "green" defect emission bands in both unannealed, nanometer-sized ZnO powders and annealed, micrometer-sized ZnO:Zn powders. We find that the primary mechanism limiting quantum efficiency is surface recombination because of the high density of nonradiative surface traps in these powders. It is found that unannealed ZnO has a high density of bulk nonradiative traps as well, but the annealing process reduces the density of these bulk traps while simultaneously creating a high density of green-emitting defects near the particle surface. The data are discussed in the context of a simple rate equation model that accounts for the quantum efficiencies of both emission bands. The results indicate how defect engineering could improve the efficiency of ultraviolet-excited ZnO:Zn-based white light phosphors.