Researcher profile

H. M. Wang

H. M. Wang contributes to research discovery and scholarly infrastructure.

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astro-ph.SR cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2014arXiv

Statistical study of free magnetic energy and flare productivity of solar active regions

Photospheric vector magnetograms from Helioseismic and Magnetic Imager on board the Solar Dynamic Observatory are utilized as the boundary conditions to extrapolate both non-linear force-free and potential magnetic fields in solar corona. Based on the extrapolations, we are able to determine the free magnetic energy (FME) stored in active regions (ARs). Over 3000 vector magnetograms in 61 ARs were analyzed. We compare FME with ARs' flare index (FI) and find that there is a weak correlation ($<60\%$) between FME and FI. FME shows slightly improved flare predictability relative to total unsigned magnetic flux of ARs in the following two aspects: (1) the flare productivity predicted by FME is higher than that predicted by magnetic flux and (2) the correlation between FI and FME is higher than that between FI and magnetic flux. However, this improvement is not significant enough to make a substantial difference in time-accumulated FI, rather than individual flare, predictions.

preprint2009arXiv

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage characteristics are governed by the space-charge-limited flow of current at low biases while the FN model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.