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Researcher profile

H. L. W. Chan

H. L. W. Chan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2013arXiv

Heteroepitaxial Growth and Multiferroic Properties of Mn-doped BiFeO3 films on SrTiO3 buffered III-V Semiconductor GaAs

Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 μC/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ferroelectric Domain Morphology Evolution and Octahedral Tilting in Lead-Free (Bi1/2Na1/2)TiO3-(Bi1/2K1/2)TiO3-(Bi1/2Li1/2)TiO3-BaTiO3 Ceramics at Different Temperatures

Observations by in-situ transmission electron microscopy (TEM) reveal the changes in domains morphology in 0.885(Bi1/2Na1/2)TiO3-0.05(Bi1/2K1/2)TiO3-0.015(Bi1/2Li1/2)TiO3-0.05BaTiO3 ceramics. Evolution of the macroscopic ferroelectric domains has been observed at 25 oC to 180 oC. The ferroelectric domains and their walls reduce progressively with increasing temperature. In the selected-area electron diffraction (SAED) patterns the crystallographic evidence of antiferroelectric domain is not found over the temperature range, which provides the evidence that the ferroelectric-antiferroelectric transition does not occur in the ceramic. The temperature-dependent forbidden 3/2 1/2 0 and superstructure 3/2 1/2 1/2 reflections indicate the presence of an in-phase and anti-phase octahedral tilting in the ceramic, respectively. Dark-field TEM images show that the size of the octahedral tilted domains is smaller than 30 nm across and these domains are uniformly distributed in the grains. The influence of the localized octahedral titling on the stability of ferroelectric domains and the temperature-dependent properties is discussed in this paper.

0 citations0 reviewsNo code linkedOpen access