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Researcher profile

H. J. Zhang

H. J. Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
astro-ph.HEcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2015arXiv

Core-dominance parameter, black hole mass and jet-disc connection in Fermi blazars

We study the relationship between jet power and accretion for Fermi and non-Fermi blazars, respectively. We also compare the relevant parameter between them. Our main results are as follows. (i) Fermi and non-Fermi blazars have significant difference in redshift, black hole mass, and broad line luminosity. (ii) Fermi blazars have higher average core-dominance parameter than non-Fermi blazars, which suggests that Fermi blazars have strong beaming effect. (iii) We find significant correlation between broad line emission and jet power for Fermi and non-Fermi blazars, respectively, which suggests a direct tight connection between jet and accretion. (iv) The accretion and black hole mass may have a different contribution to jet power for Fermi and non-Fermi blazars, respectively.

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preprint2010arXiv

Quantized Anomalous Hall Effect in Magnetic Topological Insulators

The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin Hall effect have been discovered in recent years. However, the quantized anomalous Hall (QAH) effect has not yet been realized experimentally. In a QAH insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field. In this work, based on state-of-art first principles calculations, we predict that the tetradymite semiconductors Bi$_2$Te$_3$, Bi$_2$Se$_3$, and Sb$_2$Te$_3$ form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in sharp contrast to conventional dilute magnetic semiconductor where free carriers are necessary to mediate the magnetic coupling. Magnetic order in two-dimensional thin films gives rise to a topological electronic structure characterized by a finite Chern number, with quantized Hall conductance $e^{2}/h$. Experimental realization of the long sought-after QAH insulator state could enable robust dissipationless charge transport at room temperature.

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