BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

H. -J. Drouhin

H. -J. Drouhin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2015arXiv

Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces

We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of transmission depending on the sign of their incident in-plane wavevector. In particular, the transmission is fully quenched at some points of the Brillouin zone for specific in-plane wavevectors and not for the opposite. Moreover, it is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k ? p model showing, in addition, corresponding effects in the valence band and highlighting the robustness of the effect, which even persists for a single magnetic electrode. Upon tunneling, electrons undergo an asymmetrical deflection which results in the occurrence of a transverse current, giving rise to a so-called Tunnel Hall Effect.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropic magneto-thermal transport and Spin-Seebeck effect

The angular dependence of the thermal transport in insulating or conducting ferromagnets is derived on the basis of the Onsager reciprocity relations applied to a magnetic system. It is shown that the angular dependence of the temperature gradient takes the same form as that of the anisotropic magnetoresistance, including anomalous and planar Hall contributions. The measured thermocouple generated between the extremities of the non-magnetic electrode in thermal contact to the ferromagnet follows this same angular dependence. The sign and amplitude of the magneto-voltaic signal is controlled by the difference of the Seebeck coefficients of the thermocouple.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function mapping, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermal Spin-Accumulation in Electric Conductors and Insulators

The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model is proposed in order to describe the effect of out-of-equilibrium spin-dependent heat carriers in electric conductors and insulators. It is shown that thermal spin-accumulation can be generated by the heat currents only over an arbitrarily long distance for both electric conductors or electric insulators. The diffusion equations for thermal spin-accumulation are derived in both cases, and the principle of its detection based on Spin-Nernst effect is described.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin-Currents and Spin-Pumping Forces for Spintronics

A general definition of the Spintronics concept of spin-pumping is proposed as generalized forces conjugated to the spin degrees of freedom in the framework of the theory of mesoscopic non-equilibrium thermodynamics. It is shown that at least three different kinds of spin-pumping forces and associated spin-currents can be defined in the most simple spintronics system (the Ferromagnetic/Non-Ferromagnetic metal interface). Furthermore, the generalized force associated to the ferromagnetic collective variable is also introduced in an equal footing, in order to describe the coexistence of the spin of the conduction electrons (paramagnetic spins attached to $s$-band electrons) and the ferromagnetic-order parameter. The dynamical coupling between these two kinds of magnetic degrees of freedom is presented, and interpreted in terms of spin-transfer effects.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Spin-transfer in an open ferromagnetic layer: from negative damping to effective temperature

Spin-transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin-injection. Most of the experimental results about spin transfer are described on the basis of the Landau-Lifshitz-Gilbert equation of the magnetization, in which additional current-dependent damping factors are added, and can be positive or negative. The origin of the damping can be investigated further by performing stochastic experiments, like one shot relaxation experiments under spin-injection in the activation regime of the magnetization. In this regime, the Néel-Brown activation law is observed which leads to the introduction of a current-dependent effective temperature. In order to justify the introduction of these counterintuitive parameters (effective temperature and negative damping), a detailed thermokinetic analysis of the different sub-systems involved is performed. We propose a thermokinetic description of the different forms of energy exchanged between the electric and the ferromagnetic sub-systems at a Normal/Ferromagnetic junction. The corresponding Fokker Planck equations, including relaxations, are derived. The damping coefficients are studied in terms of Onsager-Casimir transport coefficients, with the help of the reciprocity relations. The effective temperature is deduced in the activation regime.

0 citations0 reviewsNo code linkedOpen access