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H. H. Lee

H. H. Lee contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall physics.plasm-ph

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preprint2016arXiv

Role of explosive instabilities in high-$β$ disruptions in tokamaks

Intrinsically explosive growth of a ballooning finger is demonstrated in nonlinear magnetohydrodynamic calculations of high-$β$ disruptions in tokamaks. The explosive finger is formed by an ideally unstable n=1 mode, dominated by an m/n=2/1 component. The quadrupole geometry of the 2/1 perturbed pressure field provides a generic mechanism for the formation of the initial ballooning finger and its subsequent transition from exponential to explosive growth, without relying on secondary processes. The explosive ejection of the hot plasma from the core and stochastization of the magnetic field occur in Alfvénic time scales, accounting for the extremely fast growth of the precursor oscillations and the rapidity of the thermal quench in some high-$β$ disruptions.

preprint2014arXiv

Nanopatterning graphite by ion-beam-sputtering: Effects of polycrystallinity

Employing graphites having distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam-sputtering. The grains influence the growth of the ripples in highly anisotropic fashion; Both the mean uninterrupted ripple length along its ridge and the surface width depend on the mean size of the grains, which is attributed to the large sputter yield at the grain boundary compared with that on terrace. In contrast, the ripple wavelength does not depend on the mean size of the grains. Coarsening of the ripples-accompanying the mass transport across the grain boundaries-should not be driven by thermal diffusion, rather by ion-induced processes.

preprint2006arXiv

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) substrates. High-resolution x-ray diffraction and transmission electron microscopy studies revealed that the initial growth behavior and the microstructure of the films significantly depend on the growth parameters. ZnO films grown at 700 oC with 20 mTorr O2 partial pressure initiated with a columnar growth mode and contained two kinds of domains. These domains were in-plane orientated either ZnO[112-0]//Al2O3[101-0] or ZnO[101-0]//Al2O3[101-0], and were surrounded by highly defective domain boundaries with threading dislocations. The films grown at 800 oC with 1 mTorr O2 showed 2-dimensional layered growth with only one in-plane epitaxial relationship, ZnO[112-0]//Al2O3[101-0]. Most of the defects in the layered grown films were basal plane stacking faults near the interface between ZnO and the substrate. The formation mechanism of the 30o-twisted domains with the in-plane orientation of ZnO[101-0]//Al2O3[101-0] is discussed.