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Researcher profile

Høgni C. Kamban

Høgni C. Kamban contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phquant-ph

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Published work

4 published item(s)

preprint2021arXiv

Efficient ionization of two dimensional excitons by intense single cycle terahertz pulses

External electric fields are highly attractive for dynamical manipulation of excitons in two-dimensional materials. Here, we theoretically study the ionization of excitons in monolayer transition metal dichalcogenides (TMDs) by intense pulsed electric fields in the terahertz (THz) regime. We find that THz pulses with realistic field strengths are capable of ionizing a significant fraction of photogenerated excitons in TMDs into free charge carriers. Short THz pulses are therefore an efficient, non-invasive method of dynamically controlling the free carrier concentration in monolayer TMDs, which is useful for applications such as THz modulators. We further demonstrate that exciton ionization probabilities should be experimentally measurable by comparing free carrier absorption before and after the THz pulse. Detailed results are provided for different TMDs in various dielectric environments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic Stark shift, field-induced dissociation, and electroabsorption of excitons in phosphorene

We compute binding energies, Stark shifts, electric-field-induced dissociation rates, and the Franz-Keldysh effect for excitons in phosphorene in various dielectric surroundings. All three effects show a pronounced dependence on the direction of the in-plane electric field, with the dissociation rates in particular decreasing by several orders of magnitude upon rotating the electric field from the armchair to the zigzag axis. To better understand the numerical dissociation rates, we derive an analytical approximation to the anisotropic rates induced by weak electric fields, thereby generalizing the previously obtained result for isotropic two-dimensional semiconductors. This approximation is shown to be valid in the weak-field limit by comparing it to the exact rates. The anisotropy is also apparent in the large difference between armchair and zigzag components of the exciton polarizability tensor, which we compute for the five lowest lying states. As expected, we also find much more pronounced Stark shifts in either the armchair or zigzag direction, depending on the symmetry of the state in question. Finally, an isotropic interaction potential is shown to be an excellent approximation to a more accurate anisotropic interaction derived from the Poisson equation, confirming that the anisotropy of phosphorene is largely due to the direction dependence of the effective masses.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interlayer excitons in van der Waals heterostructures: Binding energy, Stark shift, and field-induced dissociation

Photoexcited intralayer excitons in van der Waals heterostructures (vdWHs) with type-II band alignment have been observed to tunnel into interlayer excitons on ultrafast timescales. Such interlayer excitons have sufficiently long lifetimes that inducing dissociation with external in-plane electric fields becomes an attractive option of improving efficiency of photocurrent devices. In the present paper, we calculate interlayer exciton binding energies, Stark shifts, and dissociation rates for six different transition metal dichalcogenide (TMD) vdWHs using a numerical procedure based on exterior complex scaling (ECS). We utilize an analytical bilayer Keldysh potential describing the interaction between the electron-hole pair, and validate its accuracy by comparing to the full multilayer Poisson equation. Based on this model, we obtain an analytical weak-field expression for the exciton dissociation rate. The heterostructures analysed are MoS$_2$/MoSe$_2$, MoS$_2$/WS$_2$, MoS$_2$/WSe$_2$, MoSe$_2$/WSe$_2$, WS$_2$/MoSe$_2$, and WS$_2$/WSe$_2$ in various dielectric environments. For weak electric fields, we find that WS$_2$/WSe$_2$ supports the fastest dissociation rates among the six structures. We, furthermore, observe that exciton dissociation rates in vdWHs are significantly larger than in their monolayer counterparts.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Finite-difference time-domain simulation of strong-field ionization: Perfectly matched layer approach

A Finite-Difference Time-Domain (FDTD) scheme with Perfectly Matched Layers (PMLs) is considered for solving the time-dependent Schrödinger equation, and simulate the ionization of an electron initially bound to a one-dimensional $δ$-potential, when applying a strong time-oscillating electric field. The performance of PMLs based on different absorption functions are compared, where we find slowly growing functions to be preferable. PMLs are shown to be able to reduce the computational domain, and thus the required numerical resources, by several orders of magnitude. This is demonstrated by testing the proposed method against an FDTD approach without PMLs and a very large computational domain. We further show that PMLs outperform the well known Exterior Complex Scaling (ECS) technique for short-range potentials when implemented in FDTD, though ECS remains superior for long-range potentials. The accuracy of the method is furthermore demonstrated by comparing with known numerical and analytical results for the $δ$-potential.

0 citations0 reviewsNo code linkedOpen access