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H. Fjellvåg

H. Fjellvåg contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2022arXiv

First principle studies on electronic and thermoelectric properties of Fe$_{2}$TiSn based multinary Heusler alloys

The alloys with 8/18/24 valence electron count (VEC) are promising candidates for efficient energy conversion and refrigeration applications at low as well as high temperatures. The full potential linearized augmented plane wave method as implemented in WIEN2k code was used to investigate electronic structure and TE transport properties with the PBE$-$GGA and TB$-$mBJ exchange potentials and Boltzmann transport theory. The calculated single crystal elastic constants, phonon dispersion and phonon density of states confirm that these systems are mechanically and dynamically stable. The TE transport properties is calculated by including the lattice part of thermal conductivity ($κ_{L}$) obtained from two methods one from the calculated elastic properties calculation ($κ^{elastic}_{L}$) and the other from phonon dispersion curve ($κ^{phonon}_{L}$). The strong phonon$-$phonon scattering by large mass difference/strain fluctuation of isovalent/aliovalent substitution at Ti/Sn sites of Fe$_{2}$TiSn reduces the lattice thermal conductivity which results in high \textit{ZT} value of 0.81 at 900\,K for Fe$_{2}$Sc$_{0.25}$Ti$_{0.5}$Ta$_{0.25}$Al$_{0.5}$Bi$_{0.5}$. The comparative analysis of TE transport properties using the band structures calculated with the PBE$-$GGA and TB$-$mBJ functional shows that the \textit{ZT} value obtained from TB$-$mBJ scheme is found to be significantly higher than that based on PBE$-$GGA. The calculated relatively low lattice thermal conductivity and high \textit{ZT} values suggest that isovalent/aliovalent substituted Fe$_{2}$TiSn are promising candidates for medium to high temperature waste heat recovery.

preprint2016arXiv

First-principles study of structural stability, dynamical and mechanical properties of Li2FeSiO4 polymorphs

Li2FeSiO4 is an important alternative cathode for next generation Li-ion batteries due to its high theoretical capacity (330 mA h/g). However, its development has faced significant challenges arising from structural complexity and poor ionic conductivity. In the present work, the relative stability, electronic structure, thermodynamics, and mechanical properties of potential cathode material Li2FeSiO4 and its polymorphs have been studied by state-of-the-art density-functional calculations. Among the 11 structural arrangements considered for the structural optimization calculations, the experimentally known monoclinic P21 modification is found to be the ground state structure. The application of pressure originates a sequence of phase transitions according to P21 - Pmn21 - I222, and the estimated values of the critical pressure are found to be 0.38 and 1.93 GPa. The electronic structures reveal that all the considered polymorphs have a non-metallic character, with band gap values varying between 3.0 and 3.2 eV. The energy differences between different polymorphs are small, and most of these structures are dynamically stable. On the other hand, the calculation of single crystal elastic constants reveals that only few Li2FeSiO4 polymorphs are mechanically stable. At room temperature, the diffusion coefficient calculations of Li2FeSiO4 in different polymorphs reveal that Li-ion conductivity of this material is destitute.

preprint2016arXiv

Search for potential precursors for Si-atomic layer deposition- a quantum chemical study

Thin film of silicon is an interesting material for many technological applications in electronic industry and in energy harvesting technologies, but requires a method for controlled growth of thin films. The purpose of this study is to screen a wide variety of Si content precursors for Si ALD reactions using state-of-the-art density-functional calculations. Among the studied 85 Si content precursors we found that C7H12OSi(Methoxy-trivinyl-silane) and C7H9NSi (Benzyliminosilane) show positive indications for ALD reactivity for Si deposition. We believe that this finding will be helpful to develop low-cost, high-energy efficiency thin-film solar cells for future scale up implementation in photovoltaics.

preprint2013arXiv

Understanding H-defect complexes in ZnO

From state-of-the-art density-functional calculations using hybrid functionals we show that, persistent $n$-type conductivity in ZnO is due to defect complexes formed between H with intrinsic and extrinsic defects. H exhibits cationic, anionic, and electrically-inactive character on interacting with defects in ZnO. The electrically-inactive molecular hydrogen can contribute to $n$-type conductivity in ZnO by activating deep donor levels into shallow levels. By calculating local vibrational mode frequencies, we have identified origins of many H-related Raman and infra-red frequencies and thus confirmed the amphoteric behavior of H.