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Researcher profile

Gyu Won Kim

Gyu Won Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2022arXiv

Interwire and Intrawire Magnetostatic Interactions in Fe-Au Barcode Nanowires with Alternating Ferromagnetically Strong and Weak Segments

Metallic barcode nanowires (BNWs) composed of repeating heterogeneous segments fabricated by template-assisted electrodeposition can offer extended functionality in magnetic, electrical, mechanical, and biomedical applications. We can consider such nanostructures as a three-dimensional system of magnetically interacting elements with magnetic behavior strongly affected by complex magnetostatic interactions. This study discusses the influence of geometrical parameters of segments on the character of their interactions and the overall magnetic behavior of the array of BNWs having alternating magnetization. By controlling the applied current densities and the elapsed time in the electrodeposition, we regulate the dimension of the Fe-Au BNWs. We show that the Fe and Au segments are made of Fe-Au alloys with high and low magnetization. With the help of micromagnetic simulations, we discover and analyze the three types of magnetostatic interactions in the BNW arrays. As a result, we demonstrate that the dominating type of interaction depends on the geometric parameters of the Fe and Au segments and the interwire and intrawire distances.

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preprint2020arXiv

Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in thin ferromagnetic films by atomic-scale modulation of interfaces

To stabilize the non-trivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI) must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show an effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of 5d heavy metal/ferromagnet/4d(5d) heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and IDMI through the interface roughness engineering at the atomic scale offers a powerful tool for the development of the spin-orbitronic devices with the precise and reliable controllability of their functionality.

0 citations0 reviewsNo code linkedOpen access