Researcher profile

Gwenael Le Gal

Gwenael Le Gal contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Zero-field magnetometry based on the combination of atomic orientation and alignment

Optically pumped magnetometers usually rely on optical pumping using circularly- or linearly-polarized light. We study here zero-field magnetometers pumped with elliptically-polarized light, preparing both atomic orientation and alignment with complementary geometries. We start by extending the "three-step approach" for elliptically-polarized pumping. This allows us studying the Hanle effect in elliptical polarization by comparing the analytical absorption signals with experiments made on helium-4 metastable state. We then study parametric resonance magnetometers based on elliptical polarization by using the dressed-atom formalism with one and two radio-frequency fields. The results show a good agreement with the experimental measurements and open interesting perspectives for magnetometry where symmetry breaking by pumping light is mitigated.

preprint2019arXiv

Ohmic contact engineering in few-layer black Phosphorus field effect transistors

Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated.