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Guojing Zhang

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Published work

3 published item(s)

preprint2022arXiv

Nonlinear structural stability and linear dynamic instability of transonic steady-states to a hydrodynamic model for semiconductors

For unipolar hydrodynamic model of semiconductor device represented by Euler-Poisson equations, when the doping profile is supersonic, the existence of steady transonic shock solutions and C-smooth steady transonic solutions for Euler-Poisson Equations were established in [27] and [41], respectively. In this paper we further study the nonlinear structural stability and the linear dynamic instability of these steady transonic solutions. When the C^1-smooth transonic steady-states pass through the sonic line, they produce singularities for the system, and cause some essential difficulty in the proof of structural stability. For any relaxation time, by means of elaborate singularity analysis, we first investigate the structural stability of the C^1-smooth transonic steady-states, once the perturbations of the initial data and the doping profiles are small enough. Moreover, when the relaxation time is large enough, under the condition that the electric field is positive at the shock location, we prove that the transonic shock steady-states are structurally stable with respect to small perturbations of the supersonic doping profile. Furthermore, we show the linearly dynamic instability for these transonic shock steady-states provided that the electric field is suitable negative. The proofs for the structural stability results are based on singularity analysis, a monotonicity argument on the shock position and the downstream density, and the stability analysis of supersonic and subsonic solutions. The linear dynamic instability of the steady transonic shock for Euler-Poisson equations can be transformed to the ill-posedness of a free boundary problem for the Klein-Gordon equation. By using a nontrivial transformation and the shooting method, we prove that the linearized problem has a transonic shock solution with exponential growths. These results enrich and develop the existing studies.

preprint2016arXiv

Steady hydrodynamic model of semiconductors with sonic boundary

In this paper, we study the well-posedness/ill-posedness and regularity of stationary solutions to the hydrodynamic model of semiconductors represented by Euler-Poisson equations with sonic boundary. When the doping profile is subsonic, we prove that, the steady-state equations with sonic boundary possess a unique interior subsonic solution, and at least one interior supersonic solution, and if the relaxation time is large and the doping profile is a small perturbation of constant, then the equations admit infinitely many transonic shock solutions, while, if the relaxation time is small enough and the doping profile is a subsonic constant, then the equations admits infinitely many $C^1$ smooth transonic solutions, and no transonic shock solution exists. When the doping profile is supersonic, we show that the system does not hold any subsonic solution, furthermore, the system doesn't admit any supersonic solution or any transonic solution if such a supersonic doping profile is small or the relaxation time is small, but it has at least one supersonic solution and infinitely many transonic solutions if the supersonic doping profile is close to the sonic line and the relaxation time is large. The interior subsonic/supersonic solutions all are global $C^{\frac{1}{2}}$ Hölder-continuous, and the exponent $\frac{1}{2}$ is optimal. The non-existence of any type solutions in the case of small doping profile or small relaxation time indicates that the semiconductor effect for the system is remarkable and cannot be ignored. The proof for the existence of subsonic/supersonic solutions is the technical compactness analysis combining the energy method and the phase-plane analysis, while the approach for the existence of multiple transonic solutions is artfully constructed. The results obtained significantly improve and develop the existing studies.

preprint2008arXiv

Optimal decay rate of the compressible Navier-Stokes-Poisson system in R^3

The compressible Navier-Stokes-Poisson (NSP) system is considered in $R^3$ in the present paper and the influences of the electric field of the internal electrostatic potential force governed by the self-consistent Poisson equation on the qualitative behaviors of solutions is analyzed. It is observed that the rotating effect of electric field affects the dispersion of fluids and reduces the time decay rate of solutions. Indeed, we show that the density of the NSP system converges to its equilibrium state at the same $L^2$-rate $(1+t)^{-\frac34}$ or $L^\infty$-rate $(1+t)^{-3/2}$ respectively as the compressible Navier-Stokes system, but the momentum of the NSP system decays at the $L^2$-rate $(1+t)^{-\frac14}$ or $L^\infty$-rate $(1+t)^{-1}$ respectively, which is slower than the $L^2$-rate $(1+t)^{-\frac34}$ or $L^\infty$-rate $(1+t)^{-3/2}$ for the compressible Navier-Stokes system. These convergence rates are also shown to be optimal for the compressible NSP system.