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Gunther Eggeler

Gunther Eggeler appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Modified Z-Phase Formation in a 12% Cr Tempered Martensite Ferritic Steel during Long-Term Creep

The formation of modified Z-phase in a 12Cr1MoV (German grade: X20) tempered martensite ferritic (TMF) steel subjected to interrupted long-term creep-testing at 550$^{\circ}$C and 120 MPa was investigated. Quantitative volumetric measurements collected from thin-foil and extraction replica samples showed that modified Z-phase precipitated in both the uniformly-elongated gauge ($f_v$: 0.23 $\pm$ 0.02 %) and thread regions ($f_v$: 0.06 $\pm$ 0.01 %) of the sample that ruptured after 139 kh. The formation of modified Z-phase was accompanied by a progressive dissolution of MX precipitates, which decreased from ($f_v$: 0.16 $\pm$ 0.02 %) for the initial state to ($f_v$: 0.03 $\pm$ 0.01 %) in the uniformly-elongated gauge section of the sample tested to failure. The interparticle spacing of the creep-strengthening MX particles increased from ($λ_{3D}$: 0.55 $\pm$ 0.05 $μm$) in the initial state to ($λ_{3D}$: 1.01 $\pm$ 0.10 $μm$) for the uniformly-elongated gauge section of the ruptured sample, while the thread region had an interparticle spacing of ($λ_{3D}$: 0.60 $\pm$ 0.05 $μm$). The locally deformed fracture region had an increased phase fraction of modified Z-phase ($f_v$: 0.40 $\pm$ 0.20 %), which implies that localised creep-strain strongly promotes the formation of modified Z-phase. The modified Z-phase precipitates did not form only on prior-austenite grain boundaries and formed throughout the tempered martensite ferritic grain structure.

preprint2014arXiv

Infrared transmission spectroscopy of charge carriers in self-assembled InAs quantum dots under surface electric fields

We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epitaxy to voltage-tune the device, while a two dimensional electron gas (2DEG) serves as back contact. Spacings of the hole sublevels are indirectly calculated using the photoluminescence spectroscopy along with FTIR spectroscopy. The observed spacings fit well to the calculated values for both electrons and holes. Additionally, the intersubband resonances of the 2DEG are enhanced due to the QD layer on top of the device.