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Source author record

Guido A. Intronati

Guido A. Intronati appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

3 published item(s)

preprint2013arXiv

Spin-orbit effects in nanowire-based wurtzite semiconductor quantum dots

We study the effect of the Dresselhaus spin-orbit interaction on the electronic states and spin relaxation rates of cylindrical quantum dots defined on quantum wires having wurtzite lattice structure. The linear and cubic contributions of the bulk Dresselhaus spin-orbit coupling are taken into account, along with the influence of a weak external magnetic field. The previously found analytic solution for the electronic states of cylindrical quantum dots with zincblende lattice structures with Rashba interaction is extended to the case of quantum dots with wurtzite lattices. For the electronic states in InAs dots, we determine the spin texture and the effective g-factor, which shows a scaling collapse when plotted as a function of an effective renormalized dot-size dependent spin-orbit coupling strength. The acoustic-phonon-induced spin relaxation rate is calculated and the transverse piezoelectric potential is shown to be the dominant one.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors

We study numerically the effects of the Rashba spin-orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin-orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin-orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.

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preprint2011arXiv

Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling

We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of doped semiconductors. The Dresselhaus-type (i.e. allowed by bulk-inversion asymmetry) hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches employed to extract the spin-relaxation time from the effective Hamiltonian: an analytical diffusive-evolution calculation and a numerical finite-size scaling.

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