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Guenevere E. D. K. Prawiroatmodjo

Guenevere E. D. K. Prawiroatmodjo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2016arXiv

Evidence of weak superconductivity at the room-temperature grown LaAlO$_{3}$/SrTiO$_3$ interface

The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of $460 \, \mathrm{mK}$, higher than any previously reported values for c-LAO/STO. The dependence of the superconducting critical current on temperature, magnetic field and backgate-controlled doping is found to be consistently described by a model of a random array of Josephson-coupled superconducting domains.

preprint2016arXiv

Patterning of high mobility electron gases at complex oxide interfaces

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO$_3$/SrTiO$_3$ (a-LAO/STO) and modulation-doped amorphous- LaAlO$_3$/La$_{7/8}$Sr$_{1/8}$MnO$_3$/SrTiO$_3$ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm$^2$/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm$^2$/Vs at 2 K.

preprint2016arXiv

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.