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Grzegorz Sęk

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Published work

4 published item(s)

preprint2022arXiv

A Quantum Key Distribution Testbed using a Plug&Play Telecom-wavelength Single-Photon Source

Deterministic solid-state quantum light sources are considered key building blocks for future communication networks. While several proof-of-principle experiments of quantum communication using such sources have been realized, most of them required large setups often involving liquid helium infrastructure or bulky closed-cycle cryotechnology. In this work, we report on the first quantum key distribution (QKD) testbed using a compact benchtop quantum dot single-photon source operating at telecom wavelengths. The plug\&play device emits single-photon pulses at O-band wavelengths ($1321\,$nm) and is based on a directly fiber-pigtailed deterministically-fabricated quantum dot device integrated into a compact Stirling cryocooler. The Stirling is housed in a 19-inch rack module including all accessories required for stand-alone operation. Implemented in a simple QKD testbed emulating the BB84 protocol with polarization coding, we achieve an antibunching of $g^{(2)}(0) = 0.10\pm0.01$ and a raw key rate of up to $(4.72\pm0.13)\,$kHz using an external pump laser. In this setting, we further evaluate the performance of our source in terms of the quantum bit error ratios, secure key rates, and tolerable losses expected in full implementations of QKD also accounting for finite key size effects. Furthermore, we investigate optimal settings for a two-dimensional temporal acceptance window applied on receiver side, resulting in predicted tolerable losses up to $23.19\,$dB. Not least, we compare our results with previous proof-of-concept QKD experiments using quantum dot single-photon sources. Our study represents an important step forward in the development of fiber-based quantum-secured communication networks exploiting sub-Poissonian quantum light sources.

preprint2020arXiv

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application.

preprint2015arXiv

Ghost Branch Photoluminescence From a Polariton Fluid Under Nonresonant Excitation

An expanding polariton condensate is investigated under pulsed nonresonant excitation with a small laser pump spot. Far above the condensation threshold we observe a pronounced increase in the dispersion curvature with a subsequent linearization of the spectrum and strong luminescence from a ghost branch orthogonally polarized with respect to the linearly polarized condensate emission. The presence of the ghost branch has been confirmed in time-resolved measurements. The dissipative and nonequilibrium effects in the photoluminescence of polariton condensates and their excitations are discussed.

preprint2010arXiv

Hole subband mixing and polarization of luminescence from quantum dashes: a simple model

In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the selective polarization properties of such structures. It shows that they are not a straightforward consequence of the geometry but are related to it via valence subband mixing. Our model allows us to predict the degree of polarization (DOP) dependence on the in-plane dimensions of investigated structures assuming a predominantly heavy hole character of the valence band states, simplifying the shape of confining potential and neglecting the influence of the out-of plane dimension. The energy dependence modeling reveals the importance of different excited states in subsequent spectral ranges leading to non-monotonic character of the DOP. The modeling results show good agreement with the experimental data for an ensemble of InAs/InP quantum dashes for a set of realistc parameters with the heavy-light hole states separation being the only adjustable one. All characteristic features are reproduced in the framework of the proposed model and their origin can be well explained and understood. We also make some further predictions about the influence of both the internal characteristics of the nanostructures (e.g. height) and the external conditions (excitation power, temperature) on the overall DOP.