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Gregory Smith

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cond-mat.mtrl-sci cond-mat.other nucl-ex

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preprint2012arXiv

Measurement of the generalized form factors near threshold via $γ^* p \to nπ^+$ at high $Q^2$

We report the first extraction of the pion-nucleon multipoles near the production threshold for the $nπ^+$ channel at relatively high momentum transfer ( $Q^2$ up to 4.2 $\rm{GeV^2}$ ). The dominance of the s-wave transverse multipole ( $E_{0+}$ ), expected in this region, allowed us to access the generalized form factor $G_1$ within the light-cone sum rule (LCSR) framework as well as the axial form factor $G_A$ . The data analyzed in this work were collected by the nearly $4π$ CEBAF Large Acceptance Spectrometer (CLAS) using a 5.754 $\rm{GeV}$ electron beam on a proton target. The differential cross section and the $π-N$ -multipole $E_{0+}/G_D$ were measured using two different methods, the LCSR and a direct multipole fit. The results from the two methods are found to be consistent and almost $Q^2$ independent.

preprint2009arXiv

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and non-contact sheet resistance measurements. It is found that the majority (~70%) of the incorporated dopants are electrically active, therefore, enabling a low sheet resistance for a given dopant areal dose. The wafer-scale uniformity is investigated and found to be limited by the temperature homogeneity of the spike anneal tool used in the experiments. Notably, minimal junction leakage currents (<1 uA/cm2) are observed which highlights the quality of the junctions formed by this process. The results clearly demonstrate the versatility and potency of the monolayer doping approach for enabling controlled, molecular-scale ultrashallow junction formation without introducing defects in the semiconductor.

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Gregory Smith

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2 publications

Measurement of the generalized form factors near threshold via $γ^* p \to nπ^+$ at high $Q^2$

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

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Gregory Smith

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2 publications

Measurement of the generalized form factors near threshold via γ∗p→nπ+γ^* p \to nπ^+γ∗p→nπ+ at high Q2Q^2Q2

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

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Measurement of the generalized form factors near threshold via $γ^* p \to nπ^+$ at high $Q^2$