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Göran Wahnström

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Published work

5 published item(s)

preprint2016arXiv

Polaronic contributions to oxidation and hole conductivity in acceptor-doped BaZrO$_3$

Acceptor-doped perovskite oxides like BaZrO$_3$ are showing great potential as materials for renewable energy technologies where hydrogen acts an energy carrier, such as solid oxide fuel cells and hydrogen separation membranes. While ionic transport in these materials has been investigated intensively, the electronic counterpart has received much less attention and further exploration in this field is required. Here, we use density functional theory (DFT) to study hole polarons and their impact on hole conductivity in Y-doped BaZrO$_3$. Three different approaches have been used to remedy the self-interaction error of local and semi-local exchange-correlation functionals: DFT$+U$, pSIC-DFT and hybrid functionals. Self-trapped holes are found to be energetically favorable by about $-$0.1 eV and the presence of yttrium results in further stabilization. Polaron migration is predicted to occur through intraoctahedral transfer and polaron rotational processes, which are associated with adiabatic barriers of about 0.1 eV. However, the rather small energies associated with polaron formation and migration suggest that the hole becomes delocalized and band-like at elevated temperatures. These results together with an endothermic oxidation reaction [A. Lindman et al., Phys. Rev. B 91, 245114 (2015)] yield a picture that is consistent with experimental data for the hole conductivity. The results we present here provide new insight into hole transport in acceptor-doped BaZrO$_3$ and similar materials, which will be of value in the future development of sustainable technologies.

preprint2015arXiv

Implications of the band gap problem on oxidation and hydration in acceptor-doped barium zirconate

Charge carrier concentrations in acceptor-doped proton-conducting perovskites are to a large extent determined by the hydration and oxidation of oxygen vacancies, which introduce protons and holes, respectively. First-principles modeling of these reactions involves calculation of formation energies of charged defects, which requires an accurate description of the band gap and the position of the band edges. Since density-functional theory (DFT) with local and semi-local exchange-correlation functionals (LDA and GGA) systematically fails to predict these quantities this can have serious implications on the modeling of defect reactions. In this study we investigate how the description of band gap and band edge positions affects the hydration and oxidation in acceptor-doped BaZrO$_3$. First-principles calculations are performed in combination with thermodynamic modeling in order to obtain equilibrium charge carrier concentrations at different temperatures and partial pressures. Three different methods have been considered: DFT with both semi-local (PBE) and hybrid (PBE0) exchange-correlation functionals, and many-body perturbation theory within the $G_0W_0$-approximation. All three methods yield similar results for the hydration reaction, which are consistent with experimental findings. For the oxidation reaction, on the other hand, there is a qualitative difference. PBE predicts the reaction to be exothermic while the two others predict an endothermic behavior. Results from thermodynamic modeling are compared with available experimental data, such as enthalpies, concentrations and conductivities, and only the results obtained with PBE0 and $G_0W_0$, with an endothermic oxidation behavior, give a satisfactory agreement with experiments.

preprint2015arXiv

Size and shape of oxygen vacancies and protons in acceptor-doped barium zirconate

The defect induced chemical expansion in acceptor-doped barium zirconate is investigated using density-functional theory (DFT) calculations. The two defect species involved in the hydration reaction, the +2 charged oxygen vacancy and the proton interstitial forming a hydroxide ion, are considered both as free defects and in association with the dopants Y, In, Sc and Ga. The defect induced strain tensor lambda is introduced, which provides a natural generalisation of the ordinary chemical expansion to three dimensions and to anisotropic distortions. Both the addition of a vacancy and a proton cause anisotropic distortions and a net contraction of the lattice, indicating that both the vacancy and the hydroxide ion are smaller than the oxygen ion. The contraction is considerably larger for the vacancy and the net effect in hydration, when a vacancy is filled and two protons are added, is an expansion, consistent with the experimental findings. The effect of the dopants on the chemical expansion in hydration is found to be quite small, even if it is assumed that both the vacancy and the proton are fully associated with a dopant atom in the lattice.

preprint2012arXiv

Oxygen vacancy segregation and space-charge effects in grain boundaries of dry and hydrated BaZrO3

A space-charge model is applied to describe the equilibrium effects of segregation of double-donor oxygen vacancies to grain boundaries in dry and wet acceptor-doped samples of the perovskite oxide BaZrO3. The grain boundary core vacancy concentrations and electrostatic potential barriers resulting from different vacancy segregation energies are evaluated. Density-functional calculations on vacancy segregation to the mirror-symmetric Σ3 (112) [-110] tilt grain boundary are also presented. Our results indicate that oxygen vacancy segregation can be responsible for the low grain boundary proton conductivity in BaZrO3 reported in the literature.

preprint2012arXiv

Theory of ultrathin films at metal-ceramic interfaces

A theoretical model for understanding the formation of interfacial thin films is presented, which combines density functional theory calculations for interface energies with thermodynamic modeling techniques for multicomponent bulk systems. The theory is applied to thin film formation in VC-doped WC-Co cemented carbides. It is predicted that ultrathin VC films may exist in WC/Co interfaces at the high temperature sintering conditions where most of the WC grain growth occurs, which provides an explanation of the grain growth inhibiting effect of VC additions in the WC-Co system.