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Glenn J. Martyna

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cond-mat.mtrl-sci cond-mat.mes-hall physics.chem-ph

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preprint2022arXiv

Doping of large-pore crown graphene nanomesh

Porous graphene structures, also termed graphene nanomeshes (GNMs), are garnering increasing interest due to their potential application to important technologies such as chemical sensing, ion-filtration, and nanoelectronics. Semiconducting GNMs designed to have fractional eV band gaps are good candidates for graphene-based electronics, provided that a mechanism for their stable and controlled doping is developed. Recent work has shown that controlled passivation of the edges of subnanometer pores and subsequent doping by atoms or molecules gives rise to {\it p}- and {\it n}-doped GNM structures. However, these structures are difficult to fabricate at the nanoscale. Here, we use first principle calculations to study the effect of the pore size on the doping physics of GNM structures with larger pores that can potentially host more than a single dopant. We show that such doping mechanism is effective even for pores with relatively large radii. We also study the effect of the number of dopants per pore on doping stability. We find that stable rigid band {\it n}- and {\it p}-doping emerges in such structures even if the dopants form a nano-cluster in the pore - rigid band doping is achieved in all {\it n}- and {\it p}-doping studied. Such doped large-pore GNM structures have potential applications as field effect transistors, and as transparent conducting electrodes.

preprint2018arXiv

Imaginary time, shredded propagator method for large-scale GW calculations

The GW method is a many-body approach capable of providing quasiparticle bands for realistic systems spanning physics, chemistry, and materials science. Despite its power, GW is not routinely applied to large complex materials due to its computational expense. We perform an exact recasting of the GW polarizability and the self-energy as Laplace integrals over imaginary time propagators. We then "shred" the propagators (via energy windowing) and approximate them in a controlled manner by using Gauss-Laguerre quadrature and discrete variable methods to treat the imaginary time propagators in real space. The resulting cubic scaling GW method has a sufficiently small prefactor to outperform standard quartic scaling methods on small systems (>=10 atoms) and also represents a substantial improvement over several other cubic methods tested. This approach is useful for evaluating quantum mechanical response function involving large sums containing energy (difference) denominators.

preprint2016arXiv

Electronic coarse graining enhances the predictive power of molecular simulation allowing challenges in water physics to be addressed

One key factor that limits the predictive power of molecular dynamics simulations is the accuracy and transferability of the input force field. Force fields are challenged by heterogeneous environments, where electronic responses give rise to biologically important forces such as many-body polarisation and dispersion. The importance of polarisation was recognised early-on and described by Cochran in 1959 [Philosophical Magazine 4 (1959) 1082-1086]. However, dispersion forces are still treated at the two-body level and in the dipole limit, although the importance of three-body terms in the condensed phase was demonstrated by Barker in the 1980s [Phys. Rev. Lett. 57 (1986) 230-233]. A way of treating both polarisation and dispersion on an equal basis is to coarse grain the electrons a molecular moiety to a single quantum harmonic oscillator, as suggested as early as the 1960s by Hirschfelder, Curtiss and Bird [The Molecular Theory of Gases and Liquids (1954)]. This treatment, when solved in the strong coupling limit, gives all orders of long-range forces. In the last decade, the tools necessary to exploit this strong coupling limit have been developed, culminating in a transferable model of water with excellent predictive power across the phase diagram. This transferability arises since the environment identifies the form of long range interactions, rather than the expressions selected by the modeller. Here, we discuss the role of electronic coarse-graining in predictive multiscale materials modelling and describe the first implementation of the method in a general purpose molecular dynamics software, QDO_MD.

preprint2015arXiv

A Graphene-Carbon Nanotube Hybrid Material for Photovoltaic Applications

Large area graphene sheets grown by chemical vapor deposition can potentially be employed as a transparent electrode in photovoltaics if their sheet resistance can be significantly lowered, without any loss in transparency. Here, we report the fabrication of a graphene-conducting-carbon-nanotube (CCNT) hybrid material with a sheet resistance considerably lower than neat graphene, and with the requisite small reduction in transparency. Graphene is deposited on top of a a self-assembled CCNT monolayer which creates parallel conducting paths on the graphene surface. The hybrid thereby circumvents electron scattering due to defects in the graphene sheet, and reduces the sheet resistance by a factor of two. The resistance can be further reduced by chemically doping the hybrid. Moreover, the chemically doped hybrid is more stable than a standalone chemically doped graphene sheet, as the CCNT network enhances the dopant binding. In order to understand the results, we develop a 2D resistance network model in which we couple the CCNT layer to the graphene sheet and demonstrate the model accounts quantitatively for the resistance decrease. Our results show that a graphene-CCNT hybrid system has high potential for use as a transparent electrode with high transparency and low sheet resistance.

preprint2014arXiv

Anisotropic strain in SmSe and SmTe: implications for electronic transport

Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress induced changes of resistivity. At room temperature these materials exhibit a pressure driven insulator-to-metal transition with resistivity decreasing by up to 7 orders of magnitude over a small pressure range. Thus, the application of only a few GPa's to the piezoresistor (SmX) allows the switching device to perform complex logic. Here we study from first principles the electronic properties of these compounds under uniaxial strain and discuss the consequences on carrier transport. The changes in the band structure show that the piezoresistive response is mostly governed by the reduction of band gap with strain. Furthermore, it becomes optimal when the Fermi level is pinned near the localized valence band. The piezoresistive effect under uniaxial strain which must be taken into account in thin films and other systems with reduced dimensionality is also quantified. Under uniaxial strain we find that the piezoresistive response can be substantially larger than in the isotropic case. Analysis of complex band structure of SmSe yields a tunneling length of the order of 1 nm. The results suggest that the conduction mechanism governing the piezoresistive effect in bulk, i.e.~thermal promotion of electrons, should still be dominant in few-nanometer-thick films.

preprint2013arXiv

Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials

Graphene nanomeshes (GNM's) formed by the creation of pore superlattices in graphene, are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional eV band gaps. The utility of GNM's would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically-motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNM's -- both {\it n}- and {\it p}-doping are achieved within a rigid-band picture. Such chelated or ``crown'' GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.