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Giulia Tenasini

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2 publications

preprint2022arXiv

Band Gap Opening in Bilayer Graphene-CrCl3_3/CrBr3_3/CrI3_3 van der Waals Interfaces

We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX3_3; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX3_3 takes place (reaching densities in excess of 101310^{13} cm−2^{-2}), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the σσ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl3_3 and BLG/CrBr3_3 the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX3_3 conduction band are correlated.

preprint2020arXiv

Giant anomalous Hall effect in quasi-two-dimensional layered antiferromagnet Co1/3_{1/3}NbS2_2

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be observed. Here, we present experiments on micro-fabricated devices based on Co1/3_{1/3}NbS2_2, a layered AFM that was recently found to exhibit AHE in bulk crystals below the Néel temperature TN_N = 29 K. Transport measurements reveal a pronounced resistivity anisotropy, indicating that upon lowering temperature the electronic coupling between individual atomic layers is increasingly suppressed. The experiments also show an extremely large anomalous Hall conductivity of approximately 400 S/cm, more than one order of magnitude larger than in the bulk, which demonstrates the importance of studying the AHE in small exfoliated crystals, less affected by crystalline defects. Interestingly, the corresponding anomalous Hall conductance, when normalized to the number of contributing atomic planes, is ∼ 0.6  e2/h\sim \, 0.6 \; e^2/h per layer, approaching the value expected for the quantized anomalous Hall effect. The observed strong anisotropy of transport and the very large anomalous Hall conductance per layer make the properties of Co1/3_{1/3}NbS2_2 compatible with the presence of partially filled topologically non-trivial 2D bands originating from the magnetic superstructure of the antiferromagnetic state. Isolating atomically thin layers of this material and controlling their charge density may therefore provide a viable route to reveal the occurrence of the quantized AHE in a 2D AFM.

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