Source author record

Giovanni Fanchini

Giovanni Fanchini appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2012arXiv

The formation of cosmic fullerenes from arophatic clusters

Fullerenes have recently been identified in space and they may play a significant role in the gas and dust budget of various astrophysical objects including planetary nebulae (PNe), reflection nebulae (RNe) and H II regions. The tenuous nature of the gas in these environments precludes the formation of fullerene materials following known vaporization or combustion synthesis routes even on astronomical timescales. We have studied the processing of hydrogenated amorphous carbon (a-C:H or HAC) nano-particles and their specific derivative structures, which we name "arophatics", in the circumstellar environments of young, carbon-rich PNe. We find that UV-irradiation of such particles can result in the formation of fullerenes, consistent with the known physical conditions in PNe and with available timescales.

preprint2006arXiv

Electric field dependence of Raman-active modes in single-wall carbon nanotube thin films

We report on electrical Raman measurements in transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external electric field results in downshifts of the D and G modes and in reduction of their intensity. The intensities of the radial breathing modes increase with electric field in metallic SWNTs, while decreasing in semiconducting SWNTs. A model explaining the phenomenon in terms of both direct and indirect (Joule heating) effects of the field is proposed. Our work rules out the elimination of large amounts of metallic SWNTs in thin film transistors using high field pulses. Our results support the existence of Kohn anomalies in the Raman-active optical branches of metallic graphitic materials [Phys. Rev. Lett. 93 (2004) 185503].