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Giorgia Fugallo

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Published work

3 published item(s)

preprint2015arXiv

Exciton energy-momentum map of hexagonal boron nitride

Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum dispersion. Here, thanks to the solution of the parameter-free Bethe- Salpeter equation (BSE), we draw and explain the exciton energy-momentum map of hexagonal boron nitride (h-BN) in the first three Brillouin zones. We show that h-BN displays strong excitonic effects not only in the optical spectra at vanishing momentum $\mathbf{q}$, as previously reported, but also at large $\mathbf{q}$. We validate our theoretical predictions by assessing the calculated exciton map by means of an inelastic x-ray scattering (IXS) experiment. Moreover, we solve the discrepancies between previous experimental data and calculations, proving then that the BSE is highly accurate through the whole momentum range. Therefore, these results put forward the combination BSE and IXS as the tool of choice for addressing the exciton dynamics in complex materials.

preprint2013arXiv

Ab initio variational approach for evaluating lattice thermal conductivity

We present a first-principles theoretical approach for evaluating the lattice thermal conductivity based on the exact solution of the Boltzmann transport equation. We use the variational principle and the conjugate gradient scheme, which provide us with an algorithm faster than the one previously used in literature and able to always converge to the exact solution. Three-phonon normal and umklapp collision, isotope scattering and border effects are rigorously treated in the calculation. Good agreement with experimental data for diamond is found. Moreover we show that by growing more enriched diamond samples it is possible to achieve values of thermal conductivity up to three times larger than the commonly observed in isotopically enriched diamond samples with 99.93% C12 and 0.07 C13.

preprint2010arXiv

Effect of hydrogen on the microstructure evolution of nanocrystalline silicon

We investigated the effect of dissolved hydrogen on the microstructure evolution of nanocrystalline silicon. Through molecular dynamics simulations we characterize the local and overall structural features of several hydrogenated samples by the quantitative calculation of their crystallinity. We prove that hydrogen incorporation is detrimental for the recrystallization and accumulates at grain boundaries, thus increasing their effective area. We further observe the formation of silicon hydrogen complexes at very high hydrogen concentration.