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Gilson Wirth

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physics.app-ph cond-mat.mes-hall cond-mat.stat-mech eess.SP

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preprint2023arXiv

Random Telegraph Noise based True Random Number Generator for Fully Integrated Systems

Generating streams of true random numbers is a critical component of many embedded systems. The design of fully integrated, area and power efficient True Random Number Generators is a challenge. We propose a fully integrated, lightweight implementation, that uses the random telegraph noise (RTN) of standard MOSFET as entropy source. It is not analog-intensive, and without traditional post-processing algorithms, the generated random bit sequence passes the National Institute of Standards and Technology (NIST) tests.

preprint2022arXiv

Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.

preprint2020arXiv

Threshold Voltage Jitter due to Random Telegraph Noise

With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and remain static over time. Besides these time-zero variability factors, factors that lead to performance variability from one instant in time to the other start playing a significant role. Random Telegraph Noise (RTN) is among these relevant time-dependent variability sources. In this work we extend the knowledge of the time-dependent random variability induced by RTN, by providing a statistical model for transistor threshold voltage jitter produced by RTN. The area scaling of threshold voltage jitter is detailed and discussed, supporting designers in transistor sizing towards a more reliable design. Not only the jitter expected in a transistor is modeled, but also its variability among transistors that by design should be equal. Besides analytical modeling, Monte Carlo simulations are run. The simulations account for the charge carrier capture and emission events related to RTN, allowing the proper evaluation of the RTN related jitter. The Monte Carlo simulations validate the analytical model and illustrate the area scaling of jitter and its variability.

preprint2010arXiv

A novel and precise time domain description of MOSFET low frequency noise due to random telegraph signals

Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at the many traps stochastically distributed at the silicon-oxide (Si-SiO2) interface of MOS transistors. In this paper we propose a novel analytical and numerical approach to statistically describe the fluctuations of current due to random telegraph signal in time domain. Our results include two distinct situations: when the density of interface trap density is uniform in energy, and when it is an u-shape curve as prescribed in literature, here described as simple quadratic function. We establish formulas for relative error as function of the parameters related to capture and emission probabilities. For a complete analysis experimental u-shape curves are used and compared with the theoretical aproach.