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Researcher profile

Gilson Wirth

Gilson Wirth contributes to research discovery and scholarly infrastructure.

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physics.app-phcond-mat.mes-halleess.SP

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Published work

3 published item(s)

preprint2023arXiv

Random Telegraph Noise based True Random Number Generator for Fully Integrated Systems

Generating streams of true random numbers is a critical component of many embedded systems. The design of fully integrated, area and power efficient True Random Number Generators is a challenge. We propose a fully integrated, lightweight implementation, that uses the random telegraph noise (RTN) of standard MOSFET as entropy source. It is not analog-intensive, and without traditional post-processing algorithms, the generated random bit sequence passes the National Institute of Standards and Technology (NIST) tests.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Estimating time constants of the RTS noise in semiconductor devices: a complete description of the observation window in the time domain

We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Threshold Voltage Jitter due to Random Telegraph Noise

With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and remain static over time. Besides these time-zero variability factors, factors that lead to performance variability from one instant in time to the other start playing a significant role. Random Telegraph Noise (RTN) is among these relevant time-dependent variability sources. In this work we extend the knowledge of the time-dependent random variability induced by RTN, by providing a statistical model for transistor threshold voltage jitter produced by RTN. The area scaling of threshold voltage jitter is detailed and discussed, supporting designers in transistor sizing towards a more reliable design. Not only the jitter expected in a transistor is modeled, but also its variability among transistors that by design should be equal. Besides analytical modeling, Monte Carlo simulations are run. The simulations account for the charge carrier capture and emission events related to RTN, allowing the proper evaluation of the RTN related jitter. The Monte Carlo simulations validate the analytical model and illustrate the area scaling of jitter and its variability.

0 citations0 reviewsNo code linkedOpen access