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Researcher profile

Georg Begemann

Georg Begemann contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2011arXiv

Inelastic cotunneling in quantum dots and molecules with weakly broken degeneracies

We calculate the nonlinear cotunneling conductance through interacting quantum dot systems in the deep Coulomb blockade regime using a rate equation approach based on the T-matrix formalism, which shows in the concerned regions very good agreement with a generalized master equation approach. Our focus is on inelastic cotunneling in systems with weakly broken degeneracies, such as complex quantum dots or molecules. We find for these systems a characteristic gate dependence of the non-equilibrium cotunneling conductance. While on one side of a Coulomb diamond the conductance decreases after the inelastic cotunneling threshold towards its saturation value, on the other side it increases monotonously even after the threshold. We show that this behavior originates from an asymmetric gate voltage dependence of the effective cotunneling amplitudes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interference effects in the Coulomb blockade regime: current blocking and spin preparation in symmetric nanojunctions

We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism to give necessary and sufficient conditions for interference blockade also in the presence of spin polarized leads. As an example we analyze a triple quantum dot single electron transistor (SET). For a set-up with parallel polarized leads, we show how to selectively prepare the system in each of the three states of an excited spin triplet without application of any external magnetic field.

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preprint2009arXiv

All-electric-spin control in interference single electron transistors

Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux provide the solid-state analogous. Intra-molecular interference has been recently discussed in molecular junctions. Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics and spin-qubit applications. The device consists of an interference single electron transistor (ISET), where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange coupling on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved.

0 citations0 reviewsNo code linkedOpen access