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Researcher profile

Gautam Mukhopadhyay

Gautam Mukhopadhyay contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scimath-phmath.MPphysics.pop-ph

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Published work

15 published item(s)

preprint2014arXiv

Properties of Tensor Hermite Polynomials

A description of Orthogonal Tensor Hermite Polynomials in 3-D is presented. These polynomials, as introduced by Grad in 1949 [1], can be used to obtain a series solution to the Boltzmann Transport Equation. The properties that are explored are scaling, translation and rotation. Order 6 Hermite Tensors are studied while obtaining the rotation relations. From the scaling of the independent variables of particle velocities, a criterion on temperature is obtained which implies that the equation can be applied to binary gas mixtures only if the temperature of the hotter constituent is less than four times that of the cooler one. This criterion and other properties of the tensor hermite polynomials obtained in this paper can be used to study gas dynamics in the thermosphere.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tailoring the structural and electronic properties of graphene-like ZnS monolayer using biaxial strain

Our First-principles Full-Potential Density Functional Theory (DFT) calculations show that a monolayer of ZnS (ML-ZnS), which is predicted to adopt a graphene-like planar honeycomb structure with a direct band gap, undergoes strain-induced modifications in its structure and band gap when subjected to in-plane homogeneous biaxial strain ($δ$). ML-ZnS gets buckled for compressive strain greater than 0.92%; the buckling parameter $Δ$ (= 0.00 Å\, for planar ML-ZnS) linearly increases with increasing compressive strain ($Δ= 0.435$ Å\,at $δ= - 5.25$%). A tensile strain of 2.91% turns the direct band gap of ML-ZnS into indirect. Within our considered strain values of $|δ| < 6%$, the band gap shows linearly decreasing (non-linearly increasing as well as decreasing) variation with tensile (compressive) strain. These predictions may be exploited in future for potential applications in strain sensors and other nano-devices such as the nano-electromechanical systems (NEMS).

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Emerging Two-dimensional Materials: graphene and its other structural analogues

The study of graphene, since its discovery around 2004, is possibly the largest and fastest growing field of research in material science, because of its exotic mechanical, thermal, electronic, optical and chemical properties. The studies of graphene have also led to further research in exploring the field of two dimensional (2D) systems in general. For instance, a number of other 2D crystals (not based on carbon, e.g., boronitrene, silicone, graphane, etc.) have been synthesized or predicted theoretically in recent years. Further, theoretical studies have predicted the possibility of other 2D hexagonal crystals of Ge, SiC, GeC, AlN, GaN, etc. The properties of these 2D materials are very different from their bulk. We shall present the general exotic properties of graphene like 2D systems followed by our computational results on the structural and electronic properties of some of them.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fermi Velocity Modulation in Graphene by Strain Engineering

Using full-potential density functional theory (DFT) calculations, we found a small asymmetry in the Fermi velocity of electrons and holes in graphene. These Fermi velocity values and their average were found to decrease with increasing in-plane homogeneous biaxial strain; the variation in Fermi velocity is quadratic in strain. The results, which can be verified by Landau level spectroscopy and quantum capacitance measurements of bi-axially strained graphene, promise potential applications in graphene based straintronics and flexible electronics.

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preprint2013arXiv

Graphene and Some of its Structural Analogues: Full-potential Density Functional Theory Calculations

Using full-potential density functional calculations we have investigated the structural and electronic properties of graphene and some of its structural analogues, viz., monolayer (ML) of SiC, GeC, BN, AlN, GaN, ZnO, ZnS and ZnSe. While our calculations corroborate some of the reported results based on different methods, our results on ZnSe, the two dimensional bulk modulus of ML-GeC, ML-AlN, ML-GaN, ML-ZnO and ML-ZnS and the effective masses of the charge carriers in these binary mono-layers are something new. With the current progress in synthesis techniques, some of these new materials may be synthesized in near future for applications in nano-devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A comparative computational study of the electronic properties of planar and buckled silicene

Using full potential density functional calculations within local density approximation (LDA), we report our investigation of the structural electronic properties of silicene (the graphene analogue of silicon), the strips of which has been synthesized recently on Ag(110) and Ag(100) surfaces. An assumed planar and an optimized buckled two dimensional (2D) hexagonal structures have been considered for comparisons of their electronic properties. Planar silicene shows a gapless band structure analogous to the band structure of graphene with charge carriers behaving like mass-less Dirac fermions, while the structurally optimized buckled silicene shows a small direct energy band gap of about 25 meV (at the K point of the hexagonal Brillouin zone) in its electronic structure and the charge carriers in this case behave like massive Dirac fermions. The actual band gap would be larger than this as LDA is known to underestimate the gap. The average Fermi velocity of the Dirac fermions in silicene was estimated at about half the value experimentally measured in graphene. These properties of silicene are attractive for some of the applications one envisages for graphene. Our finding of a direct band gap in silicene is something new. The results, if verified by experiments, are expected to have huge industrial impact in the silicon-based nano-electronics and nano-optics because of the possible compatibility silicene with current silicon-based micro-/nano technology.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain Tunable Band-gaps of Two-dimensional Hexagonal BN And AlN: An FP-(L)APW+lo Study

Using full potential density functional calculations within local density approximation (LDA), we found strain tunable band gaps of two-dimensional (2D) hexagonal BN (h-BN) and AlN (h-AlN) by application of in-plane homogeneous biaxial strain. The direct band gap of 2D h-BN turns indirect for compressive strains below 1.53% and remains direct under tensile strains up to 10%. However, the band gap of 2D h-AlN remains indirect for strains up to $\pm10%$. While our result on 2D h-BN corroborates the reported strain effect on 2D h-BN (based on pseudo-potential method), our result on the strain tunable band gap of 2D h-AlN is something new. These results may find application in fabrication of future nano-electromechanical systems (NEMS) based on 2D h-BN and h-AlN.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain-tunable band gap of a monolayer graphene analogue of ZnS monolayer

Using first-principles full-potential density functional calculations, we predict that mechanically tunable band-gap is realizable in ZnS monolayer in graphene-like honeycomb structure by application of in-plane homogeneous biaxial strain. A transition point from direct-to-indirect gap-phase is predicted to exist for biaxial tensile strain lying in the interval (2.645%, 3.171%). In the two gap-phases, the band gap decreases with increasing strain and varies linearly with strain.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain-tunable band parameters of ZnO monolayer in graphene-like honeycomb structure

We present ab initio calculations which show that the direct-band-gap, effective masses and Fermi velocities of charge carriers in ZnO monolayer (ML-ZnO) in graphene-like honeycomb structure are all tunable by application of in-plane homogeneous biaxial strain. Within our simulated strain limit of $\pm 10$%, the band gap remains direct and shows a strong non-linear variation with strain. Moreover, the average Fermi velocity of electrons in unstrained ML-ZnO is of the same order of magnitude as that in graphene. The results promise potential applications of ML-ZnO in mechatronics/straintronics and other nanodevices such as the nano-electromechanical systems (NEMS) and nano-optomechanical systems (NOMS).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structural and Electronic Properties of Graphene and Graphene-like Materials

Using full potential density functional theory calculations we have investigated the structural and electronic properties of graphene and some other graphene-like materials, viz., monolayer of SiC, GeC, BN, AlN, GaN, ZnO, ZnS and ZnSe. We hope, with the advancement of material synthesis techniques, some these new materials will be synthesized in the near future for potential applications in various nano-devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

First-Principles Study of Structural and Electronic Properties of Germanene

The ground state structural and electronic properties of germanene (the germanium analogue of graphene) are investigated using first-principles calculations. On structure optimization, the graphene-like honeycomb structure of germanene turns out as buckled (buckling parameter $Δ= 0.635$ Å) in contrast with graphene&#39;s planar structure (buckling parameter $Δ= 0.0$ Å). In spite of this, germanene has similar electronic structure as that of graphene. While corroborating the reported results, we newly predict the in-plane contraction of hexagonal Ge with (thermal) stretching along the &#34;c&#34; axis, akin to a phenomenon observed in graphite.

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preprint2011arXiv

Magnetism in Transition metal doped Cubic SiC

We report here our study on SiC doped with transition metals using first principle density functional theory calculations. We have considered cubic SiC with 3d transition metals as substitutional impurities for Si and C site separately. Cubic SiC doped with Cr, Mn, show ferromagnetism whereas with Sc, Ti, V and Co show site dependency of magnetic properties. Rests of the impurities are found to be non-magnetic.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

On the invariance of the speed of light

The invariance of the speed of light in all inertial frames - the second postulate of special theory of relativity (STR) - is shown to be an inevitable consequence of the relativity principle of special theory of relativity taken in conjunction with the homogeneity of space and time in all inertial frames, i.e., the 1st postulate of STR. The new approach presented here renders the learning of special theory of relativity logically simpler, as it makes use of only one postulate.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Strain-tunable direct band gap of ZnO monolayer in graphene-like honeycomb structure

Using full-potential density functional calculations within local density approximation (LDA), we found mechanically tunable band-gap in ZnO monolayer (ML-ZnO) in graphene-like honeycomb structure, by simulated application of in-plane homogeneous biaxial strain. Unstrained ML-ZnO was found to have a direct band gap of energy 1.68 eV within LDA; the actual band gap would be more, since LDA is known to underestimate the gap. Within our simulated strain limit of about plus or minus 10%, the band gap remains direct and shows a strong non-linear variation with strain. The results may find applications in future nano-electromechanical systems (NEMS) and nano-optomechanial systems (NOMS).

0 citations0 reviewsNo code linkedOpen access