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Researcher profile

Garnett W. Bryant

Garnett W. Bryant contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciGraphicsHuman-Computer Interactionquant-ph

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Published work

3 published item(s)

preprint2022arXiv

Evaluating Alternative Glyph Design for Showing Large-Magnitude-Range Quantum Spins

We present experimental results to explore a form of bivariate glyphs for representing large-magnitude-range vectors. The glyphs meet two conditions: (1) two visual dimensions are separable; and (2) one of the two visual dimensions uses a categorical representation (e.g., a categorical colormap). We evaluate how much these two conditions determine the bivariate glyphs' effectiveness. The first experiment asks participants to perform three local tasks requiring reading no more than two glyphs. The second experiment scales up the search space in global tasks when participants must look at the entire scene of hundreds of vector glyphs to get an answer. Our results support that the first condition is necessary for local tasks when a few items are compared. But it is not enough to understand a large amount of data. The second condition is necessary for perceiving global structures of examining very complex datasets. Participants' comments reveal that the categorical features in the bivariate glyphs trigger emergent optimal viewers' behaviors. This work contributes to perceptually accurate glyph representations for revealing patterns from large scientific results. We release source code, quantum physics data, training documents, participants' answers, and statistical analyses for reproducible science https://osf.io/4xcf5/?view_only=94123139df9c4ac984a1e0df811cd580.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light and microwave driven spin pumping across FeGaB-BiSb interface

3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bilayers of amorphous ferromagnet (FM) Fe_{78}Ga_{13}B_{9} (FeGaB) and 3-D TI Bi_{85}Sb_{15} (BiSb) activated by two complementary techniques: spin pumping and ultrafast spin-current injection. DC magnetization measurements establish the soft magnetic character of FeGaB films, which remains unaltered in the heterostructures of FeGaB-BiSb. Broadband ferromagnetic resonance (FMR) studies reveal enhanced damping of precessing magnetization and large value of spin mixing conductance (5.03 x 10^{19} m^{-2}) as the spin angular momentum leaks into the TI layer. Magnetic field controlled bipolar dc voltage generated across the TI layer by inverse spin Hall effect is analyzed to extract the values of spin Hall angle and spin diffusion length of BiSb. The spin pumping parameters derived from the measurements of the femtosecond light-pulse-induced terahertz emission are consistent with the result of FMR. Kubo-Bastin formula and tight-binding model calculations shed light on the thickness-dependent spin-Hall conductivity of the TI films, with predictions that are in remarkable agreement with the experimental data. Our results suggest that room temperature deposited amorphous and polycrystalline heterostructures provide a promising platform for creating novel spin orbit torque devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency

We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se$_{3}$ layer and AlGaAs/GaAs quantum wells with intersubband transitions (ISBTs) in the terahertz frequency regime creates new hybrid modes, namely Dirac plasmon-phonon-ISBT polaritons. The formation of these hybrid modes results in anti-crossings (spectral mode splitting) whose magnitude is an indication of the strength of the coupling. By varying the structural parameters of the constituent materials, our numerical calculations reveal that the magnitude of splitting depends strongly on the doping level and the scattering rate in the AlGaAs/GaAs quantum wells, as well as on the thickness of the GaAs spacer layer that separates the quantum-well structure from the TI layer. Our results reveal the material and device parameters required to obtain experimentally-observable signatures of strong coupling. Our model includes the contribution of an extra two-dimensional hole gas (2DHG) that is predicted to arise at the Bi$_{2}$Se$_{3}$/GaAs interface, based on density functional theory (DFT) calculations that explicitly account for details of the atomic terminations at the interface. The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac plasmon-ISBT polaritons to higher frequencies. The damping rate at this interface, in contrast, compensates the effect of the 2DHG. Finally, we observe that the phonon resonances in the TI layer are crucial to the coupling between the THz excitations in the TI and III-V materials.

0 citations0 reviewsNo code linkedOpen access