Researcher profile

G. Wolfowicz

G. Wolfowicz contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Decoherence of nuclear spins in the "frozen core" of an electron spin

Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in diamond. However, for the important platform offered by spins of donor atoms in cryogenically-cooled silicon,decoherence mechanisms of $^{29}$Si proximate nuclear spins are not yet well understood.The reason is partly because proximate spins lie within a so-called "frozen core" region where the donor electronic hyperfine interaction strongly suppresses nuclear dynamics. We investigate the decoherence of a central proximate nuclear qubit arising from quantum spin baths outside, as well as inside, the frozen core around the donor electron. We consider the effect of a very large nuclear spin bath comprising many ($\gtrsim 10^8$) weakly contributing pairs outside the frozen core. We also propose that there may be an important contribution from a few (of order $100$) symmetrically sited nuclear spin pairs ("equivalent pairs"), which were not previously considered as their effect is negligible outside the frozen core. If equivalent pairs represent a measurable source of decoherence, nuclear coherence decays could provide sensitive probes of the symmetries of electronic wavefunctions. For the phosphorus donor system, we obtain $T_{2n}$ values of order 1 second for both the "far bath" and "equivalent pair" models, confirming the suitability of proximate nuclei in silicon as very long-lived spin qubits.

preprint2014arXiv

Hyperfine Stark effect of shallow donors in silicon

We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz.