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G. Su

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Published work

3 published item(s)

preprint2022arXiv

Quantum Theory of Nonlinear Thermal Response

The Linear behavior of thermal transport has been widely explored, both theoretically and ex?perimentally. On the other hand, the nonlinear thermal response has not been fully discussed. In light of the thermal vector potential theory [Phys. Rev. Lett. 114, 196601 (2015)], we develop a general formulation to calculate the linear and nonlinear dynamic thermal responses. In the DC limit, we recover the well-known Mott relation and the Wiedemann-Franz (WF) law at the linear order response, which link the thermoelectric conductivity η, thermal conductivity \k{appa} and electric conductivity σ together. To be specific, the linear Mott relation describes the linear η is proportional to the first derivative of σ with respect to Fermi energy (for brevity we call the first derivative, the others are similar); and the linear WF law shows the linear \k{appa} is proportional to the zero derivative (i.e. the σ itself). We found there are higher-order Mott relation and WF law which follow an order-dependent relation. At the second order, the Mott relation indicates that the second order σ is proportional to the zero derivative of the second order η; but the second WF law shows that the second σ is proportional to the first derivative of \k{appa}. At the third order, the derivative order in?creases once. Although we only did explicit calculate up to the third order response, we can deduce that the n-th order electric conductivity is proportional to the n-2-th derivative of the n-th order thermoelectric conductivity for the nonlinear Mott relation; and the n-th order electric conductivity is proportional to the n-1-th derivative of the n-th order thermal conductivity for the nonlinear WF law.

preprint2015arXiv

Thermally driven pure spin and valley current via anomalous Nernst effect in monolayer group-VI dichalcogenides

Spin and valley dependent anomalous Nernst effect are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g. two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the dip state it is found that carriers with only one spin and from one valley are driven by the temperature gradient.

preprint2012arXiv

Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator

We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width increases. The conductance can be controlled by tuning the gate voltage like a spin field-effect transistor. It is found that the magnetoresistance ratio can be very large, and can also be negative owing to the anomalous transport. In addition, when there exists a magnetization component in the surface plane, it is shown that only the component parallel to the junction interface has an influence on the conductance.