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Researcher profile

G. P. Das

G. P. Das contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

8 published item(s)

preprint2015arXiv

First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device

We have elaborately studied the electronic structure of 555-777 divacancy (DV) defected armchair edged graphene nanoribbon (AGNR) and transport properties of AGNR based two-terminal device constructed with one defected electrode and one N doped electrode, by using density functional theory and non-equilibrium Green's function based approach. The introduction of 555-777 DV defect into AGNRs, results in a shifting of the π and π* bands towards the higher energy value which indicates a shifting of the Fermi level towards the lower energy. Formation of a potential barrier, very similar to that of conventional p-n junction, has been observed across the junction of defected and N doped AGNR. The prominent asymmetric feature of the current in the positive and negative bias indicates the diode like property of the device with high rectifying efficiency within wide range of bias voltages. The device also shows robust negative differential resistance (NDR) with very high peak-to-valley ratio. The analysis of the shifting of the energy states of the electrodes and the modification of the transmission function with applied bias provides an insight into the nonlinearity and asymmetry observed in the I-V characteristics. Variation of the transport properties on the width of the ribbon has also been discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Evolution of Fermi Level State Density in Ultrathin Films Near the Two Dimensional Limit: Experiment and Theory

Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theory as well as our density functional theory (DFT) calculations. DFT results also show that in the proximity of the interface the DOS values of the film and the substrate are mutually affected by each other.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum size effects in layered VX2 (X=S, Se, Te) materials: Manifestation of metal to semimetal or semiconductor transition

Most of the 2D transition metal dichalcogenides (TMDC) are nonmagnetic in pristine form. However, 2D pristine VX2 (X=S, Se, Te) materials are found to be ferromagnetic. Using spin polarized density functional theory (DFT) calculations, we have studied the electronic, magnetic and surface properties of this class of materials in both trigonal prismatic 2H- and octahedral 1T-phase. Our calculations reveal that they exhibit materially different properties in those two polymorphs. Most importantly, detailed investigation of electronic structure explored the quantum size effect in 2H-phase of these materials thereby leading to metal to semimetal (2H-VS2) or semiconductor (2H-VSe2, 2H-VTe2) transition when downsizing from bilayer to corresponding monolayer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Exploring semiconductor substrates for Silicene epitaxy

We have carried out first-principles based DFT calculation on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depends sensitively on whether the interacting top layer of the substrate is metal or non-metal terminated. The nature of silicene-monolayer on the metal termi- nated surface can be metallic or even magnetic, depending upon the choice of the substrate. The silicene overlayer undergoes n-type doping on metal terminated surface while it undergoes p-type doping on non metal terminated surfaces of the semiconductor substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Band gap engineering by functionalization of BN sheet

From first principles calculations, we investigate the stability and physical properties of single layer h-BN sheet chemically functionalized by various groups viz. H, F, OH, CH3, CHO, CN, NH2 etc. We find that full functionalization of h-BN sheet with these groups lead to decrease in its electronic band gap, albeit to different magnitudes varying from 0.3 eV to 3.1 eV, depending upon the dopant group. Functionalization by CHO group, in particular, leads to a sharp decrease in the electronic band gap of the pristine BN sheet to ~ 0.3 eV, which is congenial for its usage in transistor based devices. The phonon calculations on these sheets show that frequencies corresponding to all their vibrational modes are real (positive), thereby suggesting their inherent stability. The chemisorption energies of these groups to the B and N atoms of the sheet are found to lie in the range of 1.5 -6 eV.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Strain induced band gap deformation of H/F passivated graphene and h-BN sheet

Strain induced band gap deformations of hydrogenated/fluorinated graphene and hexagonal BN sheet have been investigated using first principles density functional calculations. Within harmonic approximation, the deformation is found to be higher for hydrogenated systems than for the fluorinated systems. Interestingly, our calculated band gap deformation for hydrogenated/fluorinated graphene and BN sheets are positive, while those for pristine graphene and BN sheet are found to be negative. This is due to the strong overlap between nearest neighbor π orbitals in the pristine sheets, that is absent in the passivated systems. We also estimate the intrinsic strength of these materials under harmonic uniaxial strain, and find that the in-plane stiffness of fluorinated and hydrogenated graphene are close, but larger in magnitude as compared to those of fluorinated and hydrogenated BN sheet.

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preprint2010arXiv

Electronic and Structural Analysis of a Stable Hydrogenated BN sheet (BHNH): A First Principles Based Approach

From first-principles density functional calculations, we study the structural and electronic properties of a stable hydrogenated BN sheet, having formula unit BHNH. In the optimized BHNH structure, the H atoms stabilize on the B and N sites, alternating themselves on both sides of the BN-plane in specific periodic manner, giving rise to different BHNH conformers, viz. chair, boat and stirrup. The chair and boat conformers resemble in structure to those of graphane (CH). We propose a new conformer, called 'stirrup' conformer, that turns out to be the most stable, albeit marginally with respect to the boat conformer. All these BHNH conformers are insulator, with band gap varying between ~ 3.0 eV to 4.5 eV.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The third conformer of graphane: A first principles DFT based study

We propose, on the basis of our first principles density functional based calculations, a new isomer of graphane, in which the C-H bonds of a hexagon alternate in 3-up, 3-down fashion on either side of the sheet. This 2D puckered structure called 'stirrup' has got a comparable stability with the previously discovered chair and boat conformers of graphane. The physico-chemical properties of this third conformer are found to be similar to the other two conformers of graphane with an insulating direct band gap of 3.1 eV at the Γ point. Any other alternative hydrogenation of the graphene sheet disrupts its symmetric puckered geometry and turns out to be energetically less favorable.

0 citations0 reviewsNo code linkedOpen access