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G. Mirek Brandt

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2 publications

preprint2021arXiv

Dynamical Mass of the Young Substellar Companion HD 984 B

Model-independent masses of substellar companions are critical tools to validate models of planet and brown dwarf cooling, test their input physics, and determine the formation and evolution of these objects. In this work, we measure the dynamical mass and orbit of the young substellar companion HD 984 B. We obtained new high-contrast imaging of the HD 984 system with Keck/NIRC2 which expands the baseline of relative astrometry from 3 to 8 years. We also present new radial velocities of the host star with the Habitable-Zone Planet Finder spectrograph at the Hobby-Eberly Telescope. Furthermore, HD 984 exhibits a significant proper motion difference between Hipparcos and Gaia EDR3. Our joint orbit fit of the relative astrometry, proper motions, and radial velocities yields a dynamical mass of 61±461 \pm 4 MJup\mathrm{M_{Jup}} for HD 984 B, placing the companion firmly in the brown dwarf regime. The new fit also reveals a higher eccentricity for the companion (e=0.76±0.05e = 0.76 \pm 0.05) compared to previous orbit fits. Given the broad age constraint for HD 984, this mass is consistent with predictions from evolutionary models. HD 984 B's dynamical mass places it among a small but growing list of giant planet and brown dwarf companions with direct mass measurements.

preprint2020arXiv

Ultrabroadband Density of States of Amorphous In-Ga-Zn-O

The sub-gap density of states of amorphous indium gallium zinc oxide (aa-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both near the conduction band and deep in the sub-gap, with peak densities of 1017−101810^{17}-10^{18} cm−3^{-3}eV−1^{-1}. Two deep acceptor-like metal vacancy peaks with peak densities in the range of 101810^{18} cm−3^{-3}eV−1^{-1} and lie adjacent to the valance band Urbach tail region at 2.0 to 2.5 eV below the conduction band edge. By applying detailed charge balance, we show increasing the density of metal vacancy deep-acceptors strongly shifts the aa-IGZO TFT threshold voltage to more positive values. Photoionization (hνν > 2.0 eV) of metal vacancy acceptors is one cause of transfer curve hysteresis in aa-IGZO TFTs owing to longer recombination lifetimes as they get captured into acceptor-like vacancies.

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