Source author record

G. H. Wang

G. H. Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall nucl-th

Catalog footprint

What is connected

2works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2014arXiv

Pairing transitions in the finite-temperature relativistic Hartree-Bogoliubov theory

We formulate the finite-temperature relativistic Hartree-Bogoliubov theory for spherical nuclei based on a point-coupling functional, with the Gogny or separable pairing force. Using the functional PC-PK1, the framework is applied to the study of pairing transitions in Ca, Ni, Sn, and Pb isotopic chains. The separable pairing force reproduces the gaps calculated with the Gogny force not only at zero temperature, but also at finite temperatures. By performing a systematic calculation of the even-even Ca, Ni, Sn, and Pb isotopes, it is found that the critical temperature for a pairing transition generally follows the rule $T_c =0.6 Δ_n(0)$, where $Δ_n(0)$ is the neutron pairing gap at zero temperature. This rule is further verified by adjusting the pairing gap at zero temperature with a strength parameter.

preprint2006arXiv

Hopping Conduction in Disordered Carbon Nanotubes

We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as exp[-(T_{0}/T)^{1/2}] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T_{0}. The field dependence of low-temperature conductance behaves an exp[-(xi_{0}/xi)^{1/2}] with high electric field xi at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at low T = 1.7 K. Comparison with theory indicates that our data are best explained by Coulomb-gap variable range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant.