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G. Fiori

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2010arXiv

Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrödinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high work function Au, Pd and Pt electrodes, while contact resistance becomes dominant in the case of Al.

preprint2010arXiv

Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies

We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of the conductance distribution $g$. The underlying mechanism is based on wavefunction localizations and perturbations that in the case of the first $π-π^*$ plateau can give rise to impurity-like pseudogaps with both donor and acceptor characteristics. Confinement and geometry are crucial for the manifestation of such effects. Self-consistent quantum transport calculations characterize vacancies as local charging centers that can induce electrostatic inhomogeneities on the ribbon topology.

preprint2009arXiv

Ultra-low-voltage bilayer graphene tunnel FET

In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schroedinger equations in three dimensions, within the Non-Equilibrium Green (NEGF) formalism on a Tight Binding Hamiltonian. We show that the small achievable gap of only few hundreds meV is still enough for promising TFET operation, providing a large Ion/Ioff ratio in excess of 10^3 even for a supply voltage of only 0.1 V. Key to this performance is the low quantum capacitance of bilayer graphene, which permits to obtain an extremely small sub-threshold swing S smaller than 20 mV/decade at room temperature.

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