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Researcher profile

G. D. Liu

G. D. Liu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2015arXiv

Half-metallic state and magnetic properties versus the lattice constant in Zr2RhZ (Z = Al, Ga, In) Heusler alloys

The half metallic and magnetic properties of Zr2RhZ (Z = Al, Ga, In) alloys with an Hg2CuTi-type structure were systematically investigated using the first-principle calculations. Zr2RhZ (Z = Al, Ga, In) alloys are predicted to be half-metallic ferrimagnets at their equilibrium lattice constants. The Zr2Rh-based alloys have Mt (the total magnetic moment per unit cell) and Zt (the valence concentration) values that in agreement with Slater-Pauling rule Mt = Zt -18. The half-metallic properties and the magnetic properties at different lattice constants are discussed in detail. We expect that our results may trigger Zr2RhZ (Z = Al, Ga, In) applying in the future spintronics field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds

The structural transitions, magnetic properties, and electronic structures of Co(Fe)-doped MnNiSi compounds are investigated by x-ray powder diffraction (XRD), differential scanning calorimetry (DSC), magnetic measurements, and first-principles calculations. Results indicate that all samples undergo a martensitic transition from the Ni2In-type parent phase to TiNiSi-type orthorhombic phase at high temperatures. The substitution of Co(Fe) for Mn in Mn1-xCoxNiSi (x = 0.2, 0.3, 0.4) and Mn1-yFeyNiSi (y = 0.26, 0.30, 0.36, 0.46, 0.55) samples decreases the structural transition temperature (Tt) and Curie temperature of martensite (TCM). The martensite phases show a typical ferromagnetic behavior with saturation field (HS) being basically unchanged with increasing Co(Fe) content, while the saturation magnetization (MS) shows a decreasing tendency. The theoretically calculated moments are in good agreement with the experimentally measured results. The orbital hybridizations between different 3d elements are analyzed from the distribution of density of states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

Using first-principles calculations, we investigate the band structures of a series of quaternary LiMgPdSn-type Heusler compounds. Our calculation results show that five compounds CoFeMnSi, CoFeCrAl, CoMnCrSi, CoFeVSi and FeMnCrSb possess unique electronic structures characterized by a half-metallic gap in one spin direction while a zero-width gap in the other spin direction showing spin gapless semiconducting behavior. We further analysis the electronic and magnetic properties of all quaternary Heusler alloys involved, and reveal a semi-empirical general rule (total valence electrons number being 26 or 28) for indentifying spin gapless semiconductors in Heusler compounds. The influences of lattice distortion and main-group element change have also been discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamma 8) band inversion. Our results strongly support that the spin-orbit coupling is not an essential factor to the band inversion mechanism; on the contrary, it is mainly responsible to the formation of a global band gap for the studied topological insulators. We further theoretically explore the feasibility of tuning the topological order of the studied compounds with two types of strains. The results show that the uniaxial strain can contribute extremely drastic impacts to the band inversion behavior, which provide an effective approach to induce topological phase transition.

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