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Researcher profile

G. Bastard

G. Bastard contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

4 published item(s)

preprint2011arXiv

Free carrier absorption in quantum cascade structures

We show that the free carrier absorption in Quantum Cascade Lasers is very small and radically different from the classical Drude result on account of the orthogonality between the direction of the carrier free motion and the electric field of the laser emission. A quantum mechanical calculation of the free carrier absorption and inter-subband oblique absorption induced by interface defects, coulombic impurities and optical phonon absorption/emission is presented for QCL's with a double quantum well design. The interaction between the electrons and the optical phonons dominates at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Optical phonon scattering and theory of magneto-polarons in a quantum cascade laser in a strong magnetic field

We report a theoretical study of the carrier relaxation in a quantum cascade laser (QCL) subjected to a strong magnetic field. Both the alloy (GaInAs) disorder effects and the Frohlich interaction are taken into account when the electron energy differences are tuned to the longitudinal optical (LO) phonon energy. In the weak electron-phonon coupling regime, a Fermi's golden rule computation of LO phonon scattering rates shows a very fast non-radiative relaxation channel for the alloy broadened Landau levels (LL's). In the strong electron-phonon coupling regime, we use a magneto-polaron formalism and compute the electron survival probabilities in the upper LL's with including increasing numbers of LO phonon modes for a large number of alloy disorder configurations. Our results predict a nonexponential decay of the upper level population once electrons are injected in this state.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Bound-to-bound and bound-to-continuum optical transitions in combined quantum dot - superlattice systems

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects

We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum wells. The dependence of the binding energy gain and of the trion size on the quantum well width are variationally calculated. We show that the trion is more sensitive to interface defects than the exciton.

0 citations0 reviewsNo code linkedOpen access