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G B Sushko appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Published work
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package [2,3], which simulates classical trajectories of in a crystalline medium by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. A Monte Carlo approach is employed to sample the incoming electrons and to account for thermal vibrations of the crystal atoms. The electron channeling along Si(110) crystallographic planes are studied for the projectile energies 195--855 MeV and different curvatures of the bent crystal.
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195--855 MeV.